Magnetoresistance of Fe3 O4 -graphene- Fe3 O4 junctions

Zhi Min Liao; Han Chun Wu; Jing Jing Wang; Graham L.W. Cross; Shishir Kumar; Igor V. Shvets; Georg S. Duesberg

doi:10.1063/1.3552679

Magnetoresistance of Fe₃ O₄ -graphene- Fe₃ O₄ junctions

Zhi Min Liao^*, Han Chun Wu, Jing Jing Wang, Graham L.W. Cross, Shishir Kumar, Igor V. Shvets, Georg S. Duesberg

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

18 引用（Scopus）

摘要

The magnetoresistance (MR) of Fe₃ O₄ -graphene- Fe₃ O₄ junctions has been experimentally studied at different temperatures. It is found that a barrier exists at the Fe₃ O₄ /graphene interface. The existence of the interfacial barrier was further confirmed by the nonlinear I-V characteristics and nonmetallic temperature dependence of the interfacial resistance. Moreover, spin dependent transport at the interfaces contributes -1.6% MR to the whole device at room temperature and can be regulated by an external electric field.

源语言	英语
文章编号	052511
期刊	Applied Physics Letters
卷	98
期	5
DOI	https://doi.org/10.1063/1.3552679
出版状态	已出版 - 31 1月 2011
已对外发布	是

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Liao, Z. M., Wu, H. C., Wang, J. J., Cross, G. L. W., Kumar, S., Shvets, I. V., & Duesberg, G. S. (2011). Magnetoresistance of Fe₃ O₄ -graphene- Fe₃ O₄ junctions. Applied Physics Letters, 98(5), 文章 052511. https://doi.org/10.1063/1.3552679

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AU - Kumar, Shishir

AU - Shvets, Igor V.

AU - Duesberg, Georg S.

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AB - The magnetoresistance (MR) of Fe3 O4 -graphene- Fe3 O4 junctions has been experimentally studied at different temperatures. It is found that a barrier exists at the Fe3 O4 /graphene interface. The existence of the interfacial barrier was further confirmed by the nonlinear I-V characteristics and nonmetallic temperature dependence of the interfacial resistance. Moreover, spin dependent transport at the interfaces contributes -1.6% MR to the whole device at room temperature and can be regulated by an external electric field.

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Magnetoresistance of Fe3 O4 -graphene- Fe3 O4 junctions

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Magnetoresistance of Fe₃ O₄ -graphene- Fe₃ O₄ junctions