Magnetism modulation in Co₃Sn₂S₂ by current-assisted domain wall motion

The efficiency of spintronic devices can be improved by generating higher effective magnetic fields with lower working currents. Spin-transfer torques can drive magnetic domain wall motion in a device composed of a single material, but a high threshold current density is typically required to move the domain wall and improving the effective magnetic field in common itinerant ferromagnets is difficult. Here we report magnetism modulation in Co₃Sn₂S₂—a magnetic Weyl semimetal—via spin-transfer-torque-driven domain wall motion. We examine the effect of d.c. current on magnetic reversal using anomalous Hall resistance measurements and domain wall motion using time-of-flight measurements. At 160 K, the threshold current density for driving domain wall motion is less than 5.1 × 10⁵A cm⁻² at zero external field and less than 1.5 × 10⁵A cm⁻² at a moderate external field (0.2 kOe). The spin-transfer-torque effective field can reach as high as 2.4–5.6 kOe MA⁻¹ cm² at 150 K.