Low-temperature bonding of Cu on Si3N4 substrate by using Ti/Cu thin films

Yanyu Song; Ling Liu; Duo Liu; Xiaoguo Song; Jian Cao

doi:10.1016/j.matlet.2022.132330

Low-temperature bonding of Cu on Si₃N₄ substrate by using Ti/Cu thin films

Yanyu Song, Ling Liu, Duo Liu^*, Xiaoguo Song, Jian Cao

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

A low-temperature bonding method of Si₃N₄/Si₃N₄ homostructure and Si₃N₄/Cu heterostructure was developed in this work. The flawless interfaces were obtained by sputtered Ti/Cu thin films after bonding at 250 °C for 30 min under a uniaxial pressure of 20 MPa. The Ti film is able to improve the adhesion of the Cu film to Si₃N₄ substrate, and the low-temperature bonding was achieved in view of high diffusion rates of Cu nanocrystalline film with (1 1 1) crystal plane. This proof-of-concept study on the low-temperature bonding of Si₃N₄ ceramic to Cu is expected to address residual stress caused by ordinary active metal brazing (AMB) method, which provides insights for the further heterogeneous integrations of ceramics to metals.

源语言	英语
文章编号	132330
期刊	Materials Letters
卷	320
DOI	https://doi.org/10.1016/j.matlet.2022.132330
出版状态	已出版 - 1 8月 2022
已对外发布	是

访问文件

10.1016/j.matlet.2022.132330

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{da01a69cdda541bf9c1d80c3dccd74de,

title = "Low-temperature bonding of Cu on Si3N4 substrate by using Ti/Cu thin films",

abstract = "A low-temperature bonding method of Si3N4/Si3N4 homostructure and Si3N4/Cu heterostructure was developed in this work. The flawless interfaces were obtained by sputtered Ti/Cu thin films after bonding at 250 °C for 30 min under a uniaxial pressure of 20 MPa. The Ti film is able to improve the adhesion of the Cu film to Si3N4 substrate, and the low-temperature bonding was achieved in view of high diffusion rates of Cu nanocrystalline film with (1 1 1) crystal plane. This proof-of-concept study on the low-temperature bonding of Si3N4 ceramic to Cu is expected to address residual stress caused by ordinary active metal brazing (AMB) method, which provides insights for the further heterogeneous integrations of ceramics to metals.",

keywords = "Cu-on-SiN, Diffusion bonding, Microstructure, Sputtering, Ti/Cu thin films",

author = "Yanyu Song and Ling Liu and Duo Liu and Xiaoguo Song and Jian Cao",

note = "Publisher Copyright: {\textcopyright} 2022",

year = "2022",

month = aug,

day = "1",

doi = "10.1016/j.matlet.2022.132330",

language = "English",

volume = "320",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Low-temperature bonding of Cu on Si3N4 substrate by using Ti/Cu thin films

AU - Song, Yanyu

AU - Liu, Ling

AU - Liu, Duo

AU - Song, Xiaoguo

AU - Cao, Jian

PY - 2022/8/1

Y1 - 2022/8/1

N2 - A low-temperature bonding method of Si3N4/Si3N4 homostructure and Si3N4/Cu heterostructure was developed in this work. The flawless interfaces were obtained by sputtered Ti/Cu thin films after bonding at 250 °C for 30 min under a uniaxial pressure of 20 MPa. The Ti film is able to improve the adhesion of the Cu film to Si3N4 substrate, and the low-temperature bonding was achieved in view of high diffusion rates of Cu nanocrystalline film with (1 1 1) crystal plane. This proof-of-concept study on the low-temperature bonding of Si3N4 ceramic to Cu is expected to address residual stress caused by ordinary active metal brazing (AMB) method, which provides insights for the further heterogeneous integrations of ceramics to metals.

AB - A low-temperature bonding method of Si3N4/Si3N4 homostructure and Si3N4/Cu heterostructure was developed in this work. The flawless interfaces were obtained by sputtered Ti/Cu thin films after bonding at 250 °C for 30 min under a uniaxial pressure of 20 MPa. The Ti film is able to improve the adhesion of the Cu film to Si3N4 substrate, and the low-temperature bonding was achieved in view of high diffusion rates of Cu nanocrystalline film with (1 1 1) crystal plane. This proof-of-concept study on the low-temperature bonding of Si3N4 ceramic to Cu is expected to address residual stress caused by ordinary active metal brazing (AMB) method, which provides insights for the further heterogeneous integrations of ceramics to metals.

KW - Cu-on-SiN

KW - Diffusion bonding

KW - Microstructure

KW - Sputtering

KW - Ti/Cu thin films

UR - http://www.scopus.com/inward/record.url?scp=85129091489&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2022.132330

DO - 10.1016/j.matlet.2022.132330

M3 - Article

AN - SCOPUS:85129091489

SN - 0167-577X

VL - 320

JO - Materials Letters

JF - Materials Letters

M1 - 132330

ER -

Low-temperature bonding of Cu on Si3N4 substrate by using Ti/Cu thin films

摘要

访问文件

其它文件与链接

指纹

引用此

Low-temperature bonding of Cu on Si₃N₄ substrate by using Ti/Cu thin films