Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

Zhi Min Liao; Han Chun Wu; Shishir Kumar; Georg S. Duesberg; Yang Bo Zhou; Graham L.W. Cross; Igor V. Shvets; Da Peng Yu

doi:10.1002/adma.201104796

Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

Zhi Min Liao^*, Han Chun Wu, Shishir Kumar, Georg S. Duesberg, Yang Bo Zhou, Graham L.W. Cross, Igor V. Shvets, Da Peng Yu

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

71 引用（Scopus）

摘要

A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.

源语言	英语
页（从-至）	1862-1866
页数	5
期刊	Advanced Materials
卷	24
期	14
DOI	https://doi.org/10.1002/adma.201104796
出版状态	已出版 - 10 4月 2012
已对外发布	是

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Liao, Z. M., Wu, H. C., Kumar, S., Duesberg, G. S., Zhou, Y. B., Cross, G. L. W., Shvets, I. V., & Yu, D. P. (2012). Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry. Advanced Materials, 24(14), 1862-1866. https://doi.org/10.1002/adma.201104796

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keywords = "anisotropic MR, magnetoresistance, multilayer graphene, temperature dependence, weak antilocalization",

author = "Liao, {Zhi Min} and Wu, {Han Chun} and Shishir Kumar and Duesberg, {Georg S.} and Zhou, {Yang Bo} and Cross, {Graham L.W.} and Shvets, {Igor V.} and Yu, {Da Peng}",

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AU - Duesberg, Georg S.

AU - Zhou, Yang Bo

AU - Cross, Graham L.W.

AU - Shvets, Igor V.

AU - Yu, Da Peng

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KW - anisotropic MR

KW - magnetoresistance

KW - multilayer graphene

KW - temperature dependence

KW - weak antilocalization

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Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

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