Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

Zhi Min Liao*, Han Chun Wu, Shishir Kumar, Georg S. Duesberg, Yang Bo Zhou, Graham L.W. Cross, Igor V. Shvets, Da Peng Yu

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

71 引用 (Scopus)

摘要

A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.

源语言英语
页(从-至)1862-1866
页数5
期刊Advanced Materials
24
14
DOI
出版状态已出版 - 10 4月 2012
已对外发布

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