Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

Qimin Yan; Bing Huang; Jie Yu; Fawei Zheng; Ji Zang; Jian Wu; Bing Lin Gu; Feng Liu; Wenhui Duan

doi:10.1021/nl070133j

Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

Qimin Yan, Bing Huang, Jie Yu, Fawei Zheng, Ji Zang, Jian Wu, Bing Lin Gu, Feng Liu^*, Wenhui Duan

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552 引用（Scopus）

摘要

We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10 ³-10 ⁴, subthreshold swing of 60 meV per decade, and transconductance of 9.5 × 10 ³ Sm ^-1.

源语言	英语
页（从-至）	1469-1473
页数	5
期刊	Nano Letters
卷	7
期	6
DOI	https://doi.org/10.1021/nl070133j
出版状态	已出版 - 6月 2007
已对外发布	是

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abstract = "We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10 3-10 4, subthreshold swing of 60 meV per decade, and transconductance of 9.5 × 10 3 Sm -1.",

author = "Qimin Yan and Bing Huang and Jie Yu and Fawei Zheng and Ji Zang and Jian Wu and Gu, {Bing Lin} and Feng Liu and Wenhui Duan",

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AU - Yan, Qimin

AU - Huang, Bing

AU - Yu, Jie

AU - Zheng, Fawei

AU - Zang, Ji

AU - Wu, Jian

AU - Gu, Bing Lin

AU - Liu, Feng

AU - Duan, Wenhui

PY - 2007/6

Y1 - 2007/6

N2 - We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10 3-10 4, subthreshold swing of 60 meV per decade, and transconductance of 9.5 × 10 3 Sm -1.

AB - We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10 3-10 4, subthreshold swing of 60 meV per decade, and transconductance of 9.5 × 10 3 Sm -1.

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JO - Nano Letters

JF - Nano Letters

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Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping

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