Interface Engineering for Highly Efficient and Stable Planar p-i-n Perovskite Solar Cells

Yang Bai, Xiangyue Meng*, Shihe Yang

*此作品的通讯作者

科研成果: 期刊稿件文献综述同行评审

366 引用 (Scopus)

摘要

Organic-inorganic halide perovskite materials have become a shining star in the photovoltaic field due to their unique properties, such as high absorption coefficient, optimal bandgap, and high defect tolerance, which also lead to the breathtaking increase in power conversion efficiency from 3.8% to over 22% in just seven years. Although the highest efficiency was obtained from the TiO2 mesoporous structure, there are increasing studies focusing on the planar structure device due to its processibility for large-scale production. In particular, the planar p-i-n structure has attracted increasing attention on account of its tremendous advantages in, among other things, eliminating hysteresis alongside a competitive certified efficiency of over 20%. Crucial for the device performance enhancement has been the interface engineering for the past few years, especially for such planar p-i-n devices. The interface engineering aims to optimize device properties, such as charge transfer, defect passivation, band alignment, etc. Herein, recent progress on the interface engineering of planar p-i-n structure devices is reviewed. This review is mainly focused on the interface design between each layer in p-i-n structure devices, as well as grain boundaries, which are the interfaces between polycrystalline perovskite domains. Promising research directions are also suggested for further improvements.

源语言英语
文章编号1701883
期刊Advanced Energy Materials
8
5
DOI
出版状态已出版 - 15 2月 2018
已对外发布

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Bai, Y., Meng, X., & Yang, S. (2018). Interface Engineering for Highly Efficient and Stable Planar p-i-n Perovskite Solar Cells. Advanced Energy Materials, 8(5), 文章 1701883. https://doi.org/10.1002/aenm.201701883