TY - JOUR
T1 - Interface Engineering for Highly Efficient and Stable Planar p-i-n Perovskite Solar Cells
AU - Bai, Yang
AU - Meng, Xiangyue
AU - Yang, Shihe
N1 - Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/2/15
Y1 - 2018/2/15
N2 - Organic-inorganic halide perovskite materials have become a shining star in the photovoltaic field due to their unique properties, such as high absorption coefficient, optimal bandgap, and high defect tolerance, which also lead to the breathtaking increase in power conversion efficiency from 3.8% to over 22% in just seven years. Although the highest efficiency was obtained from the TiO2 mesoporous structure, there are increasing studies focusing on the planar structure device due to its processibility for large-scale production. In particular, the planar p-i-n structure has attracted increasing attention on account of its tremendous advantages in, among other things, eliminating hysteresis alongside a competitive certified efficiency of over 20%. Crucial for the device performance enhancement has been the interface engineering for the past few years, especially for such planar p-i-n devices. The interface engineering aims to optimize device properties, such as charge transfer, defect passivation, band alignment, etc. Herein, recent progress on the interface engineering of planar p-i-n structure devices is reviewed. This review is mainly focused on the interface design between each layer in p-i-n structure devices, as well as grain boundaries, which are the interfaces between polycrystalline perovskite domains. Promising research directions are also suggested for further improvements.
AB - Organic-inorganic halide perovskite materials have become a shining star in the photovoltaic field due to their unique properties, such as high absorption coefficient, optimal bandgap, and high defect tolerance, which also lead to the breathtaking increase in power conversion efficiency from 3.8% to over 22% in just seven years. Although the highest efficiency was obtained from the TiO2 mesoporous structure, there are increasing studies focusing on the planar structure device due to its processibility for large-scale production. In particular, the planar p-i-n structure has attracted increasing attention on account of its tremendous advantages in, among other things, eliminating hysteresis alongside a competitive certified efficiency of over 20%. Crucial for the device performance enhancement has been the interface engineering for the past few years, especially for such planar p-i-n devices. The interface engineering aims to optimize device properties, such as charge transfer, defect passivation, band alignment, etc. Herein, recent progress on the interface engineering of planar p-i-n structure devices is reviewed. This review is mainly focused on the interface design between each layer in p-i-n structure devices, as well as grain boundaries, which are the interfaces between polycrystalline perovskite domains. Promising research directions are also suggested for further improvements.
KW - interface engineering
KW - perovskite solar cells
KW - planar p-i-n structures
UR - http://www.scopus.com/inward/record.url?scp=85033213172&partnerID=8YFLogxK
U2 - 10.1002/aenm.201701883
DO - 10.1002/aenm.201701883
M3 - Review article
AN - SCOPUS:85033213172
SN - 1614-6832
VL - 8
JO - Advanced Energy Materials
JF - Advanced Energy Materials
IS - 5
M1 - 1701883
ER -