Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Yiqun Zhao; Libin Tang; Shengyi Yang; Shu Ping Lau; Kar Seng Teng

doi:10.1186/s11671-020-03336-7

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Yiqun Zhao, Libin Tang^*, Shengyi Yang^*, Shu Ping Lau, Kar Seng Teng^*

^*此作品的通讯作者

物理学院

科研成果: 期刊稿件 › 文章 › 同行评审

12 引用（Scopus）

摘要

GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 10¹¹ Jones at 850 nm light irradiation at room temperature was demonstrated.

源语言	英语
文章编号	138
期刊	Nanoscale Research Letters
卷	15
期	1
DOI	https://doi.org/10.1186/s11671-020-03336-7
出版状态	已出版 - 2020

联合国可持续发展目标

此成果有助于实现下列可持续发展目标：

访问文件

10.1186/s11671-020-03336-7

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{3453a82e3b344e5ebb6171ae61caf883,

title = "Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction",

abstract = "GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated.",

keywords = "GeTe, Heterojunction, Optoelectronic characteristics, Photovoltaic detector",

author = "Yiqun Zhao and Libin Tang and Shengyi Yang and Lau, {Shu Ping} and Teng, {Kar Seng}",

note = "Publisher Copyright: {\textcopyright} 2020, The Author(s).",

year = "2020",

doi = "10.1186/s11671-020-03336-7",

language = "English",

volume = "15",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

AU - Zhao, Yiqun

AU - Tang, Libin

AU - Yang, Shengyi

AU - Lau, Shu Ping

AU - Teng, Kar Seng

PY - 2020

Y1 - 2020

N2 - GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated.

AB - GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated.

KW - GeTe

KW - Heterojunction

KW - Optoelectronic characteristics

KW - Photovoltaic detector

UR - http://www.scopus.com/inward/record.url?scp=85087103092&partnerID=8YFLogxK

U2 - 10.1186/s11671-020-03336-7

DO - 10.1186/s11671-020-03336-7

M3 - Article

AN - SCOPUS:85087103092

SN - 1931-7573

VL - 15

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

M1 - 138

ER -

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

摘要

联合国可持续发展目标

访问文件

其它文件与链接

指纹

引用此