Influence of contact resistance on the electrical characteristics of organic static induction transistors

The influencing factors on the current-voltage (I-V) characteristics of organic static induction transistors (OSITs) are complicated and usually the underneath physical mechanism depends on many parameters. In this paper, firstly we come up with a typical OSIT model and summarize its theoretical equations to the I-V curves of pentacene-based OSIT ITO(Source)/Pentacene/Al(Gate)/Pentacene/Au(Drain) under both negative drain-source voltage and gate voltage (V _G), and the influence of contact resistance on OSITs is investigated. Our simulation showed that the injection barriers, the depletion layer and the gate controlling reduce when OSIT approaches the space-charge-limited current mode by decreasing the negative V _G, which confirms our previous supposal that the contact resistance at the interfaces of Al inter-gate electrode and at the two injection electrodes reduces after keeping the device for a long-enough time. Also, our simulating equations can be applied to other organic based OSITs under positive both V _DS and V _G.