@inproceedings{463bf746272f4f70a2b03be73ba64f90,
title = "In-situ Cu layer thickness measurement during chemical mechanical planarization",
abstract = "In this paper, the eddy current method is used for measuring the thickness variation of Cu layer during chemical mechanical planarization (CMP) process. And an in-situ measurement system has been developed. A series of experiments have been done on the Universal-300 CMP system for evaluating the feasibility and reliability of the in-situ measurement system, and the accuracy of the system is presented. According to the experiment results, this technique can reach to nano-scale measurement and satisfies the in-situ measurement requirements. All the efforts are expected to further improve the in situ measurement technique, and ensure that the CMP system works efficiently.",
author = "Hongkai Li and Tongqing Wang and Kun Li and Xinchun Lu",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; China Semiconductor Technology International Conference, CSTIC 2016 ; Conference date: 13-03-2016 Through 14-03-2016",
year = "2016",
month = may,
day = "2",
doi = "10.1109/CSTIC.2016.7464033",
language = "English",
series = "China Semiconductor Technology International Conference 2016, CSTIC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Hanming Wu and Hsiang-Lan Lung and Ying Shi and Dong Chen and David Huang and Qi Wang and Kuochun Wu and Ying Zhang and Cor Claeys and Steve Liang and Ru Huang and Beichao Zhang and Peilin Song and Jiang Yan and Qinghuang Lin and Kafai Lai",
booktitle = "China Semiconductor Technology International Conference 2016, CSTIC 2016",
address = "United States",
}