Improvement of ohmic contact to P-type GaN using two-step activation processing

Zhi Nong Yu; Wei Xue; Jong Wook Seo; Soon Jae Yu

doi:10.1117/12.572520

Improvement of ohmic contact to P-type GaN using two-step activation processing

Zhi Nong Yu^*, Wei Xue, Jong Wook Seo, Soon Jae Yu

^*此作品的通讯作者

光电学院

科研成果: 期刊稿件 › 会议文章 › 同行评审

摘要

A two-step rapid thermal annealing (RTA) process was investigated for electrical activation of magnesium doped GaN layer. The samples were studied by room temperature Hall measurements and I-V curve. In the two-step RTA process, the first low temperature step (600°C) with a long annealing time (4 min) was followed by the second high temperature (850°C) step with a short annealing time. A hole concentration of 1.39×10¹⁸ cm ^-3 was achieved for the activated sample. And the specific contact resistance for Ni/Au-contacted p-GaN was determined to be 1.8×10 ^-4Ω .cm², These results show that the two-step RTA process significantly improves the electrical properties of P-GaN layer compared to the one-step RTA process.

源语言	英语
文章编号	27
页（从-至）	255-258
页数	4
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	5624
DOI	https://doi.org/10.1117/12.572520
出版状态	已出版 - 2005
活动	Semiconductor and Organic Optoelectronic Materials and Devices - Beijing, 中国期限: 9 11月 2004 → 11 11月 2004

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Yu, Z. N., Xue, W., Seo, J. W., & Yu, S. J. (2005). Improvement of ohmic contact to P-type GaN using two-step activation processing. Proceedings of SPIE - The International Society for Optical Engineering, 5624, 255-258. 文章 27. https://doi.org/10.1117/12.572520

@article{1843ad62477c4a10822964bb58f81df1,

title = "Improvement of ohmic contact to P-type GaN using two-step activation processing",

abstract = "A two-step rapid thermal annealing (RTA) process was investigated for electrical activation of magnesium doped GaN layer. The samples were studied by room temperature Hall measurements and I-V curve. In the two-step RTA process, the first low temperature step (600°C) with a long annealing time (4 min) was followed by the second high temperature (850°C) step with a short annealing time. A hole concentration of 1.39×1018 cm -3 was achieved for the activated sample. And the specific contact resistance for Ni/Au-contacted p-GaN was determined to be 1.8×10 -4Ω .cm2, These results show that the two-step RTA process significantly improves the electrical properties of P-GaN layer compared to the one-step RTA process.",

keywords = "GaN, Ohmic contact, Rapid thermal annealing",

author = "Yu, {Zhi Nong} and Wei Xue and Seo, {Jong Wook} and Yu, {Soon Jae}",

year = "2005",

doi = "10.1117/12.572520",

language = "English",

volume = "5624",

pages = "255--258",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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publisher = "SPIE",

note = "Semiconductor and Organic Optoelectronic Materials and Devices ; Conference date: 09-11-2004 Through 11-11-2004",

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TY - JOUR

T1 - Improvement of ohmic contact to P-type GaN using two-step activation processing

AU - Yu, Zhi Nong

AU - Xue, Wei

AU - Seo, Jong Wook

AU - Yu, Soon Jae

PY - 2005

Y1 - 2005

N2 - A two-step rapid thermal annealing (RTA) process was investigated for electrical activation of magnesium doped GaN layer. The samples were studied by room temperature Hall measurements and I-V curve. In the two-step RTA process, the first low temperature step (600°C) with a long annealing time (4 min) was followed by the second high temperature (850°C) step with a short annealing time. A hole concentration of 1.39×1018 cm -3 was achieved for the activated sample. And the specific contact resistance for Ni/Au-contacted p-GaN was determined to be 1.8×10 -4Ω .cm2, These results show that the two-step RTA process significantly improves the electrical properties of P-GaN layer compared to the one-step RTA process.

AB - A two-step rapid thermal annealing (RTA) process was investigated for electrical activation of magnesium doped GaN layer. The samples were studied by room temperature Hall measurements and I-V curve. In the two-step RTA process, the first low temperature step (600°C) with a long annealing time (4 min) was followed by the second high temperature (850°C) step with a short annealing time. A hole concentration of 1.39×1018 cm -3 was achieved for the activated sample. And the specific contact resistance for Ni/Au-contacted p-GaN was determined to be 1.8×10 -4Ω .cm2, These results show that the two-step RTA process significantly improves the electrical properties of P-GaN layer compared to the one-step RTA process.

KW - GaN

KW - Ohmic contact

KW - Rapid thermal annealing

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U2 - 10.1117/12.572520

DO - 10.1117/12.572520

M3 - Conference article

AN - SCOPUS:17644422248

SN - 0277-786X

VL - 5624

SP - 255

EP - 258

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 27

T2 - Semiconductor and Organic Optoelectronic Materials and Devices

Y2 - 9 November 2004 through 11 November 2004

ER -

Improvement of ohmic contact to P-type GaN using two-step activation processing

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