Liu, B., Shen, Z., Li, X., Kuang, D., Liu, X., Zhang, S., Wen, C., Zi, X., Zhang, X., Sun, H., Yuan, G., Guo, J., Ning, C., Shi, D., Qiu, A., Wang, F., & Yu, Z. (2025). Hydrogen behavior and microstructural evolution in flexible IGZO thin films under stress. Materials Science in Semiconductor Processing, 187, 文章 109151. https://doi.org/10.1016/j.mssp.2024.109151
Liu, Bin ; Shen, Zhen ; Li, Xuyang 等. / Hydrogen behavior and microstructural evolution in flexible IGZO thin films under stress. 在: Materials Science in Semiconductor Processing. 2025 ; 卷 187.
@article{e15c209fea174f57aac12f71ce2f8d8d,
title = "Hydrogen behavior and microstructural evolution in flexible IGZO thin films under stress",
abstract = "In this study, we investigated the effect of mechanical stress on hydrogen diffusion in flexible amorphous InGaZnO (a-IGZO) thin films and the resulting microstructural changes. The cyclic bending test under different curvature radii (R) revealed significant morphological evolution and bond state changes in IGZO thin films. As the curvature radius decreases from 20 mm to 5 mm, the surface of the sample gradually becomes rough and cracks appear. Simultaneously, changes in nanoscale topological structure and chemical composition exhibit stronger hydrogen diffusion and structural relaxation: The oxygen-hydrogen (O-H) bond content increased from 19 % to 55 %, while the metal-oxygen (M − O) bond content decreased from 50 % to 28 %. The M − H content increased, and In-H related structures underwent transformation. The radius of gyration (Rg) increasing from 1.652 nm to 1.812 nm. These results provide quantitative insights into the stability and performance of IGZO-based flexible electronic devices under mechanical deformation.",
keywords = "Hydrogen diffusion, InGaZnO, Mechanical stress, Nanoscale topological structure",
author = "Bin Liu and Zhen Shen and Xuyang Li and Dan Kuang and Xianwen Liu and Shuo Zhang and Congyang Wen and Xiaorui Zi and Xi Zhang and Haoran Sun and Guangcai Yuan and Jian Guo and Ce Ning and Dawei Shi and Anyuan Qiu and Feng Wang and Zhinong Yu",
note = "Publisher Copyright: {\textcopyright} 2024",
year = "2025",
month = mar,
day = "1",
doi = "10.1016/j.mssp.2024.109151",
language = "English",
volume = "187",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Ltd.",
}
Liu, B, Shen, Z, Li, X, Kuang, D, Liu, X, Zhang, S, Wen, C, Zi, X, Zhang, X, Sun, H, Yuan, G, Guo, J, Ning, C, Shi, D, Qiu, A, Wang, F & Yu, Z 2025, 'Hydrogen behavior and microstructural evolution in flexible IGZO thin films under stress', Materials Science in Semiconductor Processing, 卷 187, 109151. https://doi.org/10.1016/j.mssp.2024.109151
Hydrogen behavior and microstructural evolution in flexible IGZO thin films under stress. / Liu, Bin; Shen, Zhen; Li, Xuyang 等.
在:
Materials Science in Semiconductor Processing, 卷 187, 109151, 01.03.2025.
科研成果: 期刊稿件 › 文章 › 同行评审
TY - JOUR
T1 - Hydrogen behavior and microstructural evolution in flexible IGZO thin films under stress
AU - Liu, Bin
AU - Shen, Zhen
AU - Li, Xuyang
AU - Kuang, Dan
AU - Liu, Xianwen
AU - Zhang, Shuo
AU - Wen, Congyang
AU - Zi, Xiaorui
AU - Zhang, Xi
AU - Sun, Haoran
AU - Yuan, Guangcai
AU - Guo, Jian
AU - Ning, Ce
AU - Shi, Dawei
AU - Qiu, Anyuan
AU - Wang, Feng
AU - Yu, Zhinong
N1 - Publisher Copyright:
© 2024
PY - 2025/3/1
Y1 - 2025/3/1
N2 - In this study, we investigated the effect of mechanical stress on hydrogen diffusion in flexible amorphous InGaZnO (a-IGZO) thin films and the resulting microstructural changes. The cyclic bending test under different curvature radii (R) revealed significant morphological evolution and bond state changes in IGZO thin films. As the curvature radius decreases from 20 mm to 5 mm, the surface of the sample gradually becomes rough and cracks appear. Simultaneously, changes in nanoscale topological structure and chemical composition exhibit stronger hydrogen diffusion and structural relaxation: The oxygen-hydrogen (O-H) bond content increased from 19 % to 55 %, while the metal-oxygen (M − O) bond content decreased from 50 % to 28 %. The M − H content increased, and In-H related structures underwent transformation. The radius of gyration (Rg) increasing from 1.652 nm to 1.812 nm. These results provide quantitative insights into the stability and performance of IGZO-based flexible electronic devices under mechanical deformation.
AB - In this study, we investigated the effect of mechanical stress on hydrogen diffusion in flexible amorphous InGaZnO (a-IGZO) thin films and the resulting microstructural changes. The cyclic bending test under different curvature radii (R) revealed significant morphological evolution and bond state changes in IGZO thin films. As the curvature radius decreases from 20 mm to 5 mm, the surface of the sample gradually becomes rough and cracks appear. Simultaneously, changes in nanoscale topological structure and chemical composition exhibit stronger hydrogen diffusion and structural relaxation: The oxygen-hydrogen (O-H) bond content increased from 19 % to 55 %, while the metal-oxygen (M − O) bond content decreased from 50 % to 28 %. The M − H content increased, and In-H related structures underwent transformation. The radius of gyration (Rg) increasing from 1.652 nm to 1.812 nm. These results provide quantitative insights into the stability and performance of IGZO-based flexible electronic devices under mechanical deformation.
KW - Hydrogen diffusion
KW - InGaZnO
KW - Mechanical stress
KW - Nanoscale topological structure
UR - http://www.scopus.com/inward/record.url?scp=85210117125&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2024.109151
DO - 10.1016/j.mssp.2024.109151
M3 - Article
AN - SCOPUS:85210117125
SN - 1369-8001
VL - 187
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 109151
ER -
Liu B, Shen Z, Li X, Kuang D, Liu X, Zhang S 等. Hydrogen behavior and microstructural evolution in flexible IGZO thin films under stress. Materials Science in Semiconductor Processing. 2025 3月 1;187:109151. doi: 10.1016/j.mssp.2024.109151