TY - GEN
T1 - Hot electrons modulation of third harmonic generation in graphene
AU - Soavi, Giancarlo
AU - Wang, Gang
AU - Rostami, Habib
AU - Tomadin, Andrea
AU - Baici, Osman
AU - Paradisanos, Ioannis
AU - Pogna, Eva A.A.
AU - Cerullo, Giulio
AU - Lidorikis, Elefterios
AU - Polini, Marco
AU - Ferrari, Andrea C.
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - Hot-electrons dominate the ultrafast (∼fs-ps) optical and electronic properties of metals and semiconductors [1-2] and they are exploited in a variety of applications including photovoltaics and photodetection. Here we perform power-dependent third harmonic generation (THG) measurements on gated single layer graphene (SLG) and we show that hot-electrons modulate significantly the power-law dependence of THG, inducing a large deviation from the expected cubic power-law. We use a Chemical Vapor Deposition (CVD) SLG sample transferred on Fused Silica (FS) and gated by ionic liquid (IL), Fig.1(a). We excite the sample with the idler beam of an Optical Parametric Oscillator (OPO, Coherent) at a photon energy of hω0=0.69eV. The OPO is seeded by a mode-locked Ti:Sa laser (Coherent) with 150fs pulse duration and 80MHz repetition rate. The OPO idler spot-size is∼4.7μm and the pulse duration ∼300fs.
AB - Hot-electrons dominate the ultrafast (∼fs-ps) optical and electronic properties of metals and semiconductors [1-2] and they are exploited in a variety of applications including photovoltaics and photodetection. Here we perform power-dependent third harmonic generation (THG) measurements on gated single layer graphene (SLG) and we show that hot-electrons modulate significantly the power-law dependence of THG, inducing a large deviation from the expected cubic power-law. We use a Chemical Vapor Deposition (CVD) SLG sample transferred on Fused Silica (FS) and gated by ionic liquid (IL), Fig.1(a). We excite the sample with the idler beam of an Optical Parametric Oscillator (OPO, Coherent) at a photon energy of hω0=0.69eV. The OPO is seeded by a mode-locked Ti:Sa laser (Coherent) with 150fs pulse duration and 80MHz repetition rate. The OPO idler spot-size is∼4.7μm and the pulse duration ∼300fs.
UR - http://www.scopus.com/inward/record.url?scp=85074336556&partnerID=8YFLogxK
U2 - 10.1109/CLEOE-EQEC.2019.8871860
DO - 10.1109/CLEOE-EQEC.2019.8871860
M3 - Conference contribution
AN - SCOPUS:85074336556
T3 - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
BT - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
Y2 - 23 June 2019 through 27 June 2019
ER -