Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

Dalin Zhang; Gong Cheng; Jianquan Wang; Chunqian Zhang; Zhi Liu; Yuhua Zuo; Jun Zheng; Chunlai Xue; Chuanbo Li; Buwen Cheng; Qiming Wang

doi:10.1186/1556-276X-9-661

Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

Dalin Zhang, Gong Cheng, Jianquan Wang, Chunqian Zhang, Zhi Liu, Yuhua Zuo, Jun Zheng, Chunlai Xue, Chuanbo Li^*, Buwen Cheng, Qiming Wang

^*此作品的通讯作者

材料学院

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an I_ON/I_OFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.

源语言	英语
文章编号	661
期刊	Nanoscale Research Letters
卷	9
期	1
DOI	https://doi.org/10.1186/1556-276X-9-661
出版状态	已出版 - 2014

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abstract = "An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an ION/IOFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.",

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doi = "10.1186/1556-276X-9-661",

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T1 - Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

AU - Zhang, Dalin

AU - Cheng, Gong

AU - Wang, Jianquan

AU - Zhang, Chunqian

AU - Liu, Zhi

AU - Zuo, Yuhua

AU - Zheng, Jun

AU - Xue, Chunlai

AU - Li, Chuanbo

AU - Cheng, Buwen

AU - Wang, Qiming

PY - 2014

Y1 - 2014

N2 - An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an ION/IOFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.

AB - An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an ION/IOFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.

KW - Horizontal transfer

KW - Photoconductive performance

KW - Si nanowires

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DO - 10.1186/1556-276X-9-661

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JO - Nanoscale Research Letters

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Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

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