Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

Dalin Zhang; Gong Cheng; Jianquan Wang; Chunqian Zhang; Zhi Liu; Yuhua Zuo; Jun Zheng; Chunlai Xue; Chuanbo Li; Buwen Cheng; Qiming Wang

doi:10.1186/1556-276X-9-661

Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

Dalin Zhang, Gong Cheng, Jianquan Wang, Chunqian Zhang, Zhi Liu, Yuhua Zuo, Jun Zheng, Chunlai Xue, Chuanbo Li^*, Buwen Cheng, Qiming Wang

^*此作品的通讯作者

材料学院

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an I_ON/I_OFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.

源语言	英语
文章编号	661
期刊	Nanoscale Research Letters
卷	9
期	1
DOI	https://doi.org/10.1186/1556-276X-9-661
出版状态	已出版 - 2014

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Zhang, D., Cheng, G., Wang, J., Zhang, C., Liu, Z., Zuo, Y., Zheng, J., Xue, C., Li, C., Cheng, B., & Wang, Q. (2014). Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance. Nanoscale Research Letters, 9(1), 文章 661. https://doi.org/10.1186/1556-276X-9-661

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title = "Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance",

abstract = "An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an ION/IOFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.",

keywords = "Horizontal transfer, Photoconductive performance, Si nanowires",

author = "Dalin Zhang and Gong Cheng and Jianquan Wang and Chunqian Zhang and Zhi Liu and Yuhua Zuo and Jun Zheng and Chunlai Xue and Chuanbo Li and Buwen Cheng and Qiming Wang",

note = "Publisher Copyright: {\textcopyright} 2014, Zhang et al.; licensee Springer.",

year = "2014",

doi = "10.1186/1556-276X-9-661",

language = "English",

volume = "9",

journal = "Nanoscale Research Letters",

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T1 - Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

AU - Zhang, Dalin

AU - Cheng, Gong

AU - Wang, Jianquan

AU - Zhang, Chunqian

AU - Liu, Zhi

AU - Zuo, Yuhua

AU - Zheng, Jun

AU - Xue, Chunlai

AU - Li, Chuanbo

AU - Cheng, Buwen

AU - Wang, Qiming

PY - 2014

Y1 - 2014

N2 - An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an ION/IOFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.

AB - An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an ION/IOFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.

KW - Horizontal transfer

KW - Photoconductive performance

KW - Si nanowires

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U2 - 10.1186/1556-276X-9-661

DO - 10.1186/1556-276X-9-661

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SN - 1931-7573

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JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

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Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

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