摘要
The high-temperature dielectric properties of SiO2/Si 3N4 nanocomposites are investigated theoretically and experimentally. Its permittivities and loss tangents at the temperature ranging from room temperature to 1300°C at 9.0 GHz are measured by the resonant cavity method. The SiO2/Si3N4 nanocomposites show complex dielectric behaviour at elevated temperature, and a multi-scale model is proposed to describe the dependence of the dielectric properties in the SiO2/Si3N4 on its compositional variations. Such a theory is needed so that the available property measurements could be extrapolated to other operating frequencies and temperatures.
源语言 | 英语 |
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页(从-至) | 2249-2252 |
页数 | 4 |
期刊 | Chinese Physics Letters |
卷 | 25 |
期 | 6 |
DOI | |
出版状态 | 已出版 - 1 6月 2008 |