High performance GaN based switching and linear power amplifier for airborne application

Hamid Raza Dhanyal; Weidong Hu; Ali Ahmed; Hamza Nawaz; Waseem Shahzad

doi:10.1109/PIERS-Fall48861.2019.9021854

High performance GaN based switching and linear power amplifier for airborne application

Hamid Raza Dhanyal, Weidong Hu, Ali Ahmed, Hamza Nawaz, Waseem Shahzad

集成电路与电子学院

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

Considering the requirements of amplifiers for modern communication systems and having different topology variants with different advantages or disadvantages over each other, this paper presents experimental comparison between Class AB and High efficiency Class F^-1 power amplifiers using GaN based Transistors. The results show that Class F^-1 power amplifier exhibit higher output power and higher efficiency but degraded linearity response as compared to class AB power amplifier. For comparison, the inverse class F and class AB power amplifiers were designed and implemented at 2.14 GHz using GaN Hemt. Measured performance showed 7% higher power added efficiency along with 0.3 dB increase in output power for inverse class F power amplifier.

源语言	英语
主期刊名	2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings
出版商	Institute of Electrical and Electronics Engineers Inc.
页	3278-3282
页数	5
ISBN（电子版）	9781728153049
DOI	https://doi.org/10.1109/PIERS-Fall48861.2019.9021854
出版状态	已出版 - 12月 2019
活动	2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Xiamen, 中国期限: 17 12月 2019 → 20 12月 2019

出版系列

姓名	2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings

会议

会议	2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019
国家/地区	中国
市	Xiamen
时期	17/12/19 → 20/12/19

访问文件

10.1109/PIERS-Fall48861.2019.9021854

其它文件与链接

链接到 Scopus 的出版物

引用此

Dhanyal, H. R., Hu, W., Ahmed, A., Nawaz, H., & Shahzad, W. (2019). High performance GaN based switching and linear power amplifier for airborne application. 在 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings (页码 3278-3282). 文章 9021854 (2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PIERS-Fall48861.2019.9021854

Dhanyal, Hamid Raza ; Hu, Weidong ; Ahmed, Ali 等. / High performance GaN based switching and linear power amplifier for airborne application. 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 页码 3278-3282 (2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings).

@inproceedings{011578c122074779b024579e70eed5f9,

title = "High performance GaN based switching and linear power amplifier for airborne application",

abstract = "Considering the requirements of amplifiers for modern communication systems and having different topology variants with different advantages or disadvantages over each other, this paper presents experimental comparison between Class AB and High efficiency Class F-1 power amplifiers using GaN based Transistors. The results show that Class F-1 power amplifier exhibit higher output power and higher efficiency but degraded linearity response as compared to class AB power amplifier. For comparison, the inverse class F and class AB power amplifiers were designed and implemented at 2.14 GHz using GaN Hemt. Measured performance showed 7% higher power added efficiency along with 0.3 dB increase in output power for inverse class F power amplifier.",

author = "Dhanyal, {Hamid Raza} and Weidong Hu and Ali Ahmed and Hamza Nawaz and Waseem Shahzad",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 ; Conference date: 17-12-2019 Through 20-12-2019",

year = "2019",

month = dec,

doi = "10.1109/PIERS-Fall48861.2019.9021854",

language = "English",

series = "2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "3278--3282",

booktitle = "2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings",

address = "United States",

}

Dhanyal, HR, Hu, W, Ahmed, A, Nawaz, H & Shahzad, W 2019, High performance GaN based switching and linear power amplifier for airborne application. 在 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings., 9021854, 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 页码 3278-3282, 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019, Xiamen, 中国, 17/12/19. https://doi.org/10.1109/PIERS-Fall48861.2019.9021854

High performance GaN based switching and linear power amplifier for airborne application. / Dhanyal, Hamid Raza; Hu, Weidong; Ahmed, Ali 等.
2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 页码 3278-3282 9021854 (2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - High performance GaN based switching and linear power amplifier for airborne application

AU - Dhanyal, Hamid Raza

AU - Hu, Weidong

AU - Ahmed, Ali

AU - Nawaz, Hamza

AU - Shahzad, Waseem

PY - 2019/12

Y1 - 2019/12

N2 - Considering the requirements of amplifiers for modern communication systems and having different topology variants with different advantages or disadvantages over each other, this paper presents experimental comparison between Class AB and High efficiency Class F-1 power amplifiers using GaN based Transistors. The results show that Class F-1 power amplifier exhibit higher output power and higher efficiency but degraded linearity response as compared to class AB power amplifier. For comparison, the inverse class F and class AB power amplifiers were designed and implemented at 2.14 GHz using GaN Hemt. Measured performance showed 7% higher power added efficiency along with 0.3 dB increase in output power for inverse class F power amplifier.

AB - Considering the requirements of amplifiers for modern communication systems and having different topology variants with different advantages or disadvantages over each other, this paper presents experimental comparison between Class AB and High efficiency Class F-1 power amplifiers using GaN based Transistors. The results show that Class F-1 power amplifier exhibit higher output power and higher efficiency but degraded linearity response as compared to class AB power amplifier. For comparison, the inverse class F and class AB power amplifiers were designed and implemented at 2.14 GHz using GaN Hemt. Measured performance showed 7% higher power added efficiency along with 0.3 dB increase in output power for inverse class F power amplifier.

UR - http://www.scopus.com/inward/record.url?scp=85082435947&partnerID=8YFLogxK

U2 - 10.1109/PIERS-Fall48861.2019.9021854

DO - 10.1109/PIERS-Fall48861.2019.9021854

M3 - Conference contribution

AN - SCOPUS:85082435947

T3 - 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings

SP - 3278

EP - 3282

BT - 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019

Y2 - 17 December 2019 through 20 December 2019

ER -

Dhanyal HR, Hu W, Ahmed A, Nawaz H, Shahzad W. High performance GaN based switching and linear power amplifier for airborne application. 在 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 页码 3278-3282. 9021854. (2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings). doi: 10.1109/PIERS-Fall48861.2019.9021854

High performance GaN based switching and linear power amplifier for airborne application

摘要

出版系列

会议

访问文件

其它文件与链接

指纹

引用此