High overload ability optimization of a MEMS high-g accelerometer

The structure to be measured is easy to destroy if a designed MEMS high-g acceleration sensor has less-overload ability and it is used in harsh impact environment. Through analyzing the effect of a sensor structure on its anti-overload capacity and collecting its structural damage statistics in high impact testing, a new method was put forward, it could optimize the overload-resistant ability of a high-g acceleration sensor. With this method, chamfers were added at root and end of a beam being the part most easily to be broken in a sensor structure in order to disperse the stress of such areas. When impact loads were exerted on a sensor structure, it could increase the high-overload-resistant ability. The feasibility of the method was analyzed with theoretical simulations. Then, sensors were tested with Hopkinson bar impact test method. The test result indicated that the high-overload-resistant capacity of an accelerometer optimized can be raised from 180, 000 g to 240, 000 g. It was shown that the proposed method can notablly increase the high-overload-resistane ability of a MENS high-g accelerameter.