High-order finite-element analysis for scattering characteristics of II-Vi semiconductor materials

The scattering characteristics of the II-VI semiconductor were analyzed by a method which combines the second-order finite-element method with the rigorous mode matching procedure. The method avoids the difficulty of solving the complex transcendental equation, and calculates all the eigenvalues and eigenfunctions simultaneously needed for the mode matching treatment in the longitudinal direction. As a result, the whole solution procedure was significantly simplified. A comparison was given between the experimental data and the calculated results obtained with this analysis and the network method, showing very good agreement. The accuracy and efficiency of the present method were verified.