High-mobility solution-processed amorphous indium zinc oxide/In 2O3 nanocrystal hybrid thin-film transistor

Chun Lan Wang; Xing Qiang Liu; Xiang Heng Xiao; Yue Li Liu; Wen Chen; Jin Chai Li; Guo Zhen Shen; Lei Liao

doi:10.1109/LED.2012.2226425

High-mobility solution-processed amorphous indium zinc oxide/In ₂O₃ nanocrystal hybrid thin-film transistor

Chun Lan Wang^*, Xing Qiang Liu, Xiang Heng Xiao, Yue Li Liu, Wen Chen, Jin Chai Li, Guo Zhen Shen, Lei Liao

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

23 引用（Scopus）

摘要

High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In ₂O₃ NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm²V^-1s^-1 and an on-off ratio of 10⁷ , which were obtained at 1 mol% In₂O ₃ NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.

源语言	英语
文章编号	6374643
页（从-至）	72-74
页数	3
期刊	IEEE Electron Device Letters
卷	34
期	1
DOI	https://doi.org/10.1109/LED.2012.2226425
出版状态	已出版 - 2013
已对外发布	是

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10.1109/LED.2012.2226425

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title = "High-mobility solution-processed amorphous indium zinc oxide/In 2O3 nanocrystal hybrid thin-film transistor",

abstract = "High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In 2O3 NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm2V-1s-1 and an on-off ratio of 107 , which were obtained at 1 mol% In2O 3 NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.",

keywords = "Indium zinc oxide (IZO), low temperature, solution processing, thin-film transistors (TFTs)",

author = "Wang, {Chun Lan} and Liu, {Xing Qiang} and Xiao, {Xiang Heng} and Liu, {Yue Li} and Wen Chen and Li, {Jin Chai} and Shen, {Guo Zhen} and Lei Liao",

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doi = "10.1109/LED.2012.2226425",

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AU - Wang, Chun Lan

AU - Liu, Xing Qiang

AU - Xiao, Xiang Heng

AU - Liu, Yue Li

AU - Chen, Wen

AU - Li, Jin Chai

AU - Shen, Guo Zhen

AU - Liao, Lei

PY - 2013

Y1 - 2013

N2 - High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In 2O3 NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm2V-1s-1 and an on-off ratio of 107 , which were obtained at 1 mol% In2O 3 NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.

AB - High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In 2O3 NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm2V-1s-1 and an on-off ratio of 107 , which were obtained at 1 mol% In2O 3 NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.

KW - Indium zinc oxide (IZO)

KW - low temperature

KW - solution processing

KW - thin-film transistors (TFTs)

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DO - 10.1109/LED.2012.2226425

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JF - IEEE Electron Device Letters

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High-mobility solution-processed amorphous indium zinc oxide/In 2O3 nanocrystal hybrid thin-film transistor

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High-mobility solution-processed amorphous indium zinc oxide/In ₂O₃ nanocrystal hybrid thin-film transistor