Growth of SiC-AlN whisker with the polytype of 2H

Bo Zhang; Jianbao Li; Huazhang Zhai; Shuxia Zhang

doi:10.1023/A:1014978510214

Growth of SiC-AlN whisker with the polytype of 2H

Bo Zhang^*, Jianbao Li, Huazhang Zhai, Shuxia Zhang

^*此作品的通讯作者

Tsinghua University

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

2H SiC-AlN whiskers with rectangle section were obtained by evaporating the SiC-AlN powders in the atmosphere of pure argon at 1900°C. The whiskers lie in the {001} planes and their growth direction is the (100) crystallographic orientation. The whiskers are free of the stacking faults perpendicular to the growth orientation. It was found that the growth of whiskers is brought about by VLS and VS mechanisms.

源语言	英语
页（从-至）	431-434
页数	4
期刊	Journal of Materials Science Letters
卷	21
期	5
DOI	https://doi.org/10.1023/A:1014978510214
出版状态	已出版 - 1 3月 2002
已对外发布	是

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abstract = "2H SiC-AlN whiskers with rectangle section were obtained by evaporating the SiC-AlN powders in the atmosphere of pure argon at 1900°C. The whiskers lie in the {001} planes and their growth direction is the (100) crystallographic orientation. The whiskers are free of the stacking faults perpendicular to the growth orientation. It was found that the growth of whiskers is brought about by VLS and VS mechanisms.",

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AU - Li, Jianbao

AU - Zhai, Huazhang

AU - Zhang, Shuxia

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AB - 2H SiC-AlN whiskers with rectangle section were obtained by evaporating the SiC-AlN powders in the atmosphere of pure argon at 1900°C. The whiskers lie in the {001} planes and their growth direction is the (100) crystallographic orientation. The whiskers are free of the stacking faults perpendicular to the growth orientation. It was found that the growth of whiskers is brought about by VLS and VS mechanisms.

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Growth of SiC-AlN whisker with the polytype of 2H

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