Giant gauge factor of Van der Waals material based strain sensors

Wenjie Yan, Huei Ru Fuh, Yanhui Lv, Ke Qiu Chen, Tsung Yin Tsai, Yuh Renn Wu, Tung Ho Shieh, Kuan Ming Hung*, Juncheng Li, Duan Zhang, Cormac Ó Coileáin, Sunil K. Arora, Zhi Wang, Zhaotan Jiang, Ching Ray Chang, Han Chun Wu*

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

81 引用 (Scopus)

摘要

There is an emergent demand for high-flexibility, high-sensitivity and low-power strain gauges capable of sensing small deformations and vibrations in extreme conditions. Enhancing the gauge factor remains one of the greatest challenges for strain sensors. This is typically limited to below 300 and set when the sensor is fabricated. We report a strategy to tune and enhance the gauge factor of strain sensors based on Van der Waals materials by tuning the carrier mobility and concentration through an interplay of piezoelectric and photoelectric effects. For a SnS2 sensor we report a gauge factor up to 3933, and the ability to tune it over a large range, from 23 to 3933. Results from SnS2, GaSe, GeSe, monolayer WSe2, and monolayer MoSe2 sensors suggest that this is a universal phenomenon for Van der Waals semiconductors. We also provide proof of concept demonstrations by detecting vibrations caused by sound and capturing body movements.

源语言英语
文章编号2018
期刊Nature Communications
12
1
DOI
出版状态已出版 - 1 12月 2021

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