Gate voltage dependence of weak localization in bilayer graphene

Zhi Min Liao*, Bing Hong Han, Han Chun Wu, Da Peng Yu

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

14 引用 (Scopus)

摘要

Weak localization modulated by gate voltage in bilayer graphene was studied experimentally. A transition from weak localization [near the carrier charge neutrality point (CNP)] to weak antilocalization (away from the CNP) was found. The suppressed intervalley scattering due to screening of atomically sharp defects and spin-orbit coupling regulated by gate voltage can explain the experimental results well. Our experimental results confirm the theoretical prediction that the weak localization in bilayer graphene is strongly suppressed by the trigonal warping and it is only present in systems with pronounced intervalley scattering.

源语言英语
文章编号163110
期刊Applied Physics Letters
97
16
DOI
出版状态已出版 - 18 10月 2010
已对外发布

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