GaAs HBT power amplifier used for mobile communication

Feng Qian; Xinyu Chen; Jianming Zhou; Xiaojian Chen

GaAs HBT power amplifier used for mobile communication

Feng Qian^*, Xinyu Chen, Jianming Zhou, Xiaojian Chen

^*此作品的通讯作者

Nanjing Electronic Devices Institute

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

This paper describes the design, fabrication and test results of a developed GaAs HBT power amplifier used in a mobile communication system. The circuit topology is presented. This two-stage amplifier has the associated gain of more than 30 dB and 1 dB compression output power of more than 30 dBm and the saturated output power of more than 30 dBm with the maximum power added efficiency of more than 37% at frequency 1800 MHz @ 3.6 V bias. A satisfied yield was obtained on GaAs HBT wafer in 3 inch diameter.

源语言	英语
页（从-至）	375-379+386
期刊	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
卷	21
期	4
出版状态	已出版 - 11月 2001
已对外发布	是

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title = "GaAs HBT power amplifier used for mobile communication",

abstract = "This paper describes the design, fabrication and test results of a developed GaAs HBT power amplifier used in a mobile communication system. The circuit topology is presented. This two-stage amplifier has the associated gain of more than 30 dB and 1 dB compression output power of more than 30 dBm and the saturated output power of more than 30 dBm with the maximum power added efficiency of more than 37% at frequency 1800 MHz @ 3.6 V bias. A satisfied yield was obtained on GaAs HBT wafer in 3 inch diameter.",

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AU - Zhou, Jianming

AU - Chen, Xiaojian

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N2 - This paper describes the design, fabrication and test results of a developed GaAs HBT power amplifier used in a mobile communication system. The circuit topology is presented. This two-stage amplifier has the associated gain of more than 30 dB and 1 dB compression output power of more than 30 dBm and the saturated output power of more than 30 dBm with the maximum power added efficiency of more than 37% at frequency 1800 MHz @ 3.6 V bias. A satisfied yield was obtained on GaAs HBT wafer in 3 inch diameter.

AB - This paper describes the design, fabrication and test results of a developed GaAs HBT power amplifier used in a mobile communication system. The circuit topology is presented. This two-stage amplifier has the associated gain of more than 30 dB and 1 dB compression output power of more than 30 dBm and the saturated output power of more than 30 dBm with the maximum power added efficiency of more than 37% at frequency 1800 MHz @ 3.6 V bias. A satisfied yield was obtained on GaAs HBT wafer in 3 inch diameter.

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KW - Mobile communication

KW - Power amplifier

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JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

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ER -

GaAs HBT power amplifier used for mobile communication

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