g-C₃N₄的改性策略以及g-C₃N₄/Ti₃C₂异质结研究进展

Graphite phase carbon nitride (g-C₃N₄) is a kind of metal-free semiconductor material with a forbidden band width of about 2.7 eV and has visible light response capability. Attributed to its good thermal and chemical stability, adjustable morphology and chemical structure, it is widely used in the field of photocatalysis. However, due to its low specific surface area and wide band gap, its response range to visible light is narrow and the recombination rate of photogenerated carriers is high, resulting in a low photocatalytic efficiency, which can be effectively improved by modification. The two-dimensional material Ti₃C₂ has a narrower band gap compared with other semiconductor materials, and the heterogeneous junction between Ti₃C₂ and g-C₃N₄ is expected to obtain a wider range of visible light absorption and higher photocatalytic efficiency. This article reviews the modification methods of g-C₃N₄ including morphology control, doping and constructing heterojunctions, as well as the action mechanism, preparation methods and applications of g-C₃N₄/Ti₃C₂ heterojunction in photocatalytic hydrogen evolution, organics degradation and synthesis, etc.