摘要
A three-dimensional finite element numerical modeling for the scanning microwave microscopy (SMM) setup is applied to study the full-wave quantification of the local material properties of samples. The modeling takes into account the radiation and scattering losses of the nano-sized probe neglected in previous models based on low-frequency assumptions. The scanning techniques of approach curves and constant height are implemented. In addition, we conclude that the SMM has the potential for use as a broadband dielectric spectroscopy operating at higher frequencies up to THz. The results demonstrate the accuracy of previous models. We draw conclusions in light of the experimental results.
源语言 | 英语 |
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文章编号 | 16064 |
期刊 | Scientific Reports |
卷 | 7 |
期 | 1 |
DOI | |
出版状态 | 已出版 - 1 12月 2017 |