Floating gate photo-memory devices based on van der Waals heterostructures for neuromorphic image recognition

Muhammad Zubair, Yi Dong, Bin Cai, Xiao Fu*, Hailu Wang, Tangxin Li, Jinjin Wang, Shuning Liu, Mengjia Xia, Qixiao Zhao, Runzhang Xie, Hangyu Xu, Xiaoyong Jiang, Shuhong Hu, Bo Song, Xiaolong Chen, Jiadong Zhou, Lixin Dong, Jinshui Miao*

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

9 引用 (Scopus)

摘要

Two-dimensional (2D) materials with reconfigurable properties show potential in neuromorphic hardware applications. However, most 2D materials-based neuromorphic hardware is volatile, which needs large energy to accomplish perception functions. Here, we report on nonvolatile floating gate photo-memory devices based on ReS2/h-BN/SnS2 van der Waals heterostructures. The devices exhibit a large memory window of ∼60 V, a high program/erase current ratio of ∼107 with excellent retention characteristics, a low off-state current of 7.4 × 10−13 A, and a high detectivity of 1.98 × 1013 cm Hz1/2 W−1, allowing for multi-bit information storage. For the multi-level storage capacity, 27 photo-memory states are obtained by pulsed laser illumination. Moreover, a neuromorphic computing network is also constructed based on the photo-memory devices with a maximum recognition accuracy of up to 90%. This work paves the way for miniaturization and high-density integration of future optoelectronics for neuromorphic hardware applications.

源语言英语
文章编号051102
期刊Applied Physics Letters
123
5
DOI
出版状态已出版 - 31 7月 2023

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