摘要
Large-area and highly sensitive image sensors are vital for undercell fingerprint recognition technology. The photomultiplication-type organic photodetector (PM-OPD) is one of the alternative choices due to its special active layers with the ratio of donor to acceptor by weight of about 100:3 for achieving single charge carrier transport channels, resulting in relatively low dark current density and high external quantum efficiency under low bias. The optimal PM-OPDs exhibit a maximal 2.1 × 1012 Jones specific detectivity at 610 nm under −6 V bias and a high signal-to-noise ratio of 51,400 at −5.2 V bias. Solution-processed PM-OPDs were prepared onto the top of a polycrystalline-silicon thin-film transistor readout circuit, and image sensors were successfully realized with 338 pixels resolution per inch. The electrical and optical properties of the fingerprint sensor were investigated, and high-quality fingerprint images were obtained.
源语言 | 英语 |
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页(从-至) | 15709-15717 |
页数 | 9 |
期刊 | ACS Applied Materials and Interfaces |
卷 | 17 |
期 | 10 |
DOI | |
出版状态 | 已出版 - 12 3月 2025 |