Ferroelectric diode characteristic and tri-state memory in self-assembled BiFeO3nanoislands with cross-shaped domain structure

Xiang Zhou, Haoyang Sun, Zhen Luo, Haoyu Zhao, Deshan Liang, Hasnain Mehdi Jafri, Houbing Huang*, Yuewei Yin*, Xiaoguang Li

*此作品的通讯作者

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摘要

Exotic polarization domain configurations in BiFeO3 nanoislands have recently been achieved, promising for exploring next-generation nanoelectronics. Here, different from the earlier reported BiFeO3 nanoislands with a very thin cross-shaped domain wall on LaAlO3 substrates, we observed the cross-shaped domains with a downward polarization separating quad-domains with an upward polarization, which is confirmed by spherical aberration corrected scanning transmission electron microscopy and piezoresponse force microscopy. Interestingly, the cross- and quad-domains show diode-like transport behaviors but with different rectification directions owing to their different polarization orientations. Specifically, an intriguing two-step ferroelectric polarization switching can be realized, which locally results in a tri-state nonvolatile memory. These results broaden the understanding of the interesting polarization configurations in BiFeO3 nanoislands and highlight their potential as high-density information storage.

源语言英语
文章编号042903
期刊Applied Physics Letters
121
4
DOI
出版状态已出版 - 25 7月 2022

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Zhou, X., Sun, H., Luo, Z., Zhao, H., Liang, D., Jafri, H. M., Huang, H., Yin, Y., & Li, X. (2022). Ferroelectric diode characteristic and tri-state memory in self-assembled BiFeO3nanoislands with cross-shaped domain structure. Applied Physics Letters, 121(4), 文章 042903. https://doi.org/10.1063/5.0096858