TY - JOUR
T1 - Erratum
T2 - Phase-controlled epitaxial growth of MoTe2: Approaching high-quality 2D materials for electronic devices with low contact resistance (Journal of Applied Physics (2022) 131 (110902) DOI: 10.1063/5.0073650)
AU - Tao, Li
AU - Zhou, Yaoqiang
AU - Xu, Jian Bin
N1 - Publisher Copyright:
© 2022 American Institute of Physics Inc.. All rights reserved.
PY - 2022/4/14
Y1 - 2022/4/14
N2 - This article was originally published online on 18 March 2022 with missing and incorrectly numbered reference citations. On page 3, a citation to Ref. 26 has been added in the left column, the last sentence just above Fig. 3. On page 5, in the left column, fifth line of text under heading B 1, the citation has been updated to Refs. 64, 79. On page 6, in the left column, fourth line of text, the citation has been updated to Ref. 88. On page 9, right column, eleventh line of text, the citation is updated to Ref. 90. All online versions of this article were corrected on 22 March 2022. AIP Publishing apologizes for this error.
AB - This article was originally published online on 18 March 2022 with missing and incorrectly numbered reference citations. On page 3, a citation to Ref. 26 has been added in the left column, the last sentence just above Fig. 3. On page 5, in the left column, fifth line of text under heading B 1, the citation has been updated to Refs. 64, 79. On page 6, in the left column, fourth line of text, the citation has been updated to Ref. 88. On page 9, right column, eleventh line of text, the citation is updated to Ref. 90. All online versions of this article were corrected on 22 March 2022. AIP Publishing apologizes for this error.
UR - http://www.scopus.com/inward/record.url?scp=85128979251&partnerID=8YFLogxK
U2 - 10.1063/5.0093830
DO - 10.1063/5.0093830
M3 - Comment/debate
AN - SCOPUS:85128979251
SN - 0021-8979
VL - 131
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 14
M1 - 149901
ER -