Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers

Jae Moon Chung, Xiaokun Zhang, Fei Shang, Ji Hoon Kim, Xiao Lin Wang, Shuai Liu, Baoguo Yang, Yong Xiang*

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

13 引用 (Scopus)

摘要

To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility on 8.5th generation glass substrates (2200 mm × 2500 mm). Compared with a-IGZO-based TFT with back-channel-etched (BCE) structure, a newly formed ES nano-layer (~ 100 nm) and a simultaneous etching of a-IGZO nano-layer (30 nm) and source-drain electrode layer are firstly introduced to a-IGZO-based TFT device with CL-ES structure to improve the uniformity and stability of device for large-area display. The saturation electron mobility of 8.05 cm2/V s and the Vth uniformity of 0.72 V are realized on the a-IGZO-based TFT device with CL-ES structure. In the negative bias temperature illumination stress and positive bias thermal stress reliability testing under a ± 30 V bias for 3600 s, the measured Vth shift of CL-ES-structured device significantly decreased to − 0.51 and + 1.94 V, which are much lower than that of BCE-structured device (− 3.88 V, + 5.58 V). The electrical performance of the a-IGZO-based TFT device with CL-ES structure implies that the economic transfer from a silicon-based TFT process to the metal oxide semiconductor-based process for LCD fabrication is highly feasible.

源语言英语
文章编号164
期刊Nanoscale Research Letters
13
DOI
出版状态已出版 - 2018
已对外发布

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Chung, J. M., Zhang, X., Shang, F., Kim, J. H., Wang, X. L., Liu, S., Yang, B., & Xiang, Y. (2018). Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers. Nanoscale Research Letters, 13, 文章 164. https://doi.org/10.1186/s11671-018-2571-9