摘要
It is found that the nano-cross-junction effect can lead to extremely low thermal conductivity in Silicon-nanowire-cage (SiNWC). The topological structure of SiNWC may also lead to one-dimensional electronic transport in SiNWC, which can realize high ZT combined with nano-cross-juntion effect. We studied the electronic transport properties of n-type SiNWC at room temperature. The electronic structure reflects quantum confinement in SiNWC while the conductivity and electronic thermal conductivity are restricted by the cross-sectional area, reaching even lower value compared to those of 1.1nm Si nanowire. Consequently, electronic transport in SiNWC should be typically one-dimensional.
| 源语言 | 英语 |
|---|---|
| 页（从-至） | 6023-6027 |
| 页数 | 5 |
| 期刊 | International Heat Transfer Conference |
| 卷 | 2018-August |
| DOI | |
| 出版状态 | 已出版 - 2018 |
| 已对外发布 | 是 |
| 活动 | 16th International Heat Transfer Conference, IHTC 2018 - Beijing, 中国 期限: 10 8月 2018 → 15 8月 2018 |
指纹
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Mo, S., Ma, D., Yang, L., An, M., Liu, Z., & Yang, N. (2018). Electronic transport properties of silicon nanowire cage. International Heat Transfer Conference, 2018-August, 6023-6027. https://doi.org/10.1615/ihtc16.mpe.022406