Efficiency enhancement through flat intermediate band in Quantum dot solar cell

Ali Imran, Jianliang Jiang*, Deborah Eric, Muhammad Noaman Zahid, Muhammad Yousaf, Muhammad Ahmad, Syed Ali Hassan

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

19 引用 (Scopus)

摘要

Quantum dots (QD) are playing a vital role due to their multifunctionality such as small size and tuning the range of band and have achieved a considerable attention in the recent decade. In recent research, the efficiency of the solar cell (SC) has greatly been increased by application of QD. If these dots are grown systematically, may lead to the formation of the intermediate band (IB) which leads to the absorption of photons with energy less than the actual band through intermediate absorption process and hence increasing the carrier generation rate which ultimately results in high current density keeping the output voltage unaffected. In this paper, we have proposed a method to control the band flatness of the IB in InAs/GaAs QDSC. The flatness is achieved by optimizing the doping concentration and Fermi level (FL) of the surrounding layers. Results show that the maximum 44.12% efficiency can be achieved under maximum optical intensity.

源语言英语
页(从-至)241-247
页数7
期刊Results in Physics
10
DOI
出版状态已出版 - 9月 2018

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Imran, A., Jiang, J., Eric, D., Zahid, M. N., Yousaf, M., Ahmad, M., & Hassan, S. A. (2018). Efficiency enhancement through flat intermediate band in Quantum dot solar cell. Results in Physics, 10, 241-247. https://doi.org/10.1016/j.rinp.2018.05.037