Effects of nano-SiO2 additions on wettability and interfacial IMC growth of SAC solder on Ni-xSiO2 composite electroless clad layer

Yong Wang, Xiaochen Xie, Ying Liu, Xiuchen Zhao

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

This paper prepares the Ni-SiO2 composite barrier layer containing different concentration of SiO2 nanoparticles (0g/L, 3g/L, 6g/L and 9g/L respectively). Moreover, it investigates the different concentration effects on the wettability of ternary eutectic Sn-Ag-Cu(SAC) solder on the Ni layer and the growth of interfacial intermetallic compounds(IMC) between the Sn-Ag-Cu solder and the composite coating. In this study, the Ni-xSiO2 composite barrier layers with different concentration of SiO2 nanoparticles were deposited on the surface of pure Cu plate by chemical plating technique. The max wetting Force (Fmax/mN) of SAC solder on the Ni-xSiO2 surface, microstructure and the IMC growth of solder/Ni-xSiO2 composite interface under different aging time at 170 were discussed. In comparison with the Ni barrier without SiO2, the wettability of SAC solder on the Ni-xSiO2 surface will increase evidently. Cross-section studies indicate that added SiO2 nanoparticles can inhibit interfacial IMC growth effectively.

源语言英语
主期刊名Proceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018
编辑Fei Xiao, Jun Wang, Lin Chen, Tianchun Ye
出版商Institute of Electrical and Electronics Engineers Inc.
753-756
页数4
ISBN(电子版)9781538663868
DOI
出版状态已出版 - 2 10月 2018
活动19th International Conference on Electronic Packaging Technology, ICEPT 2018 - Shanghai, 中国
期限: 8 8月 201811 8月 2018

出版系列

姓名Proceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018

会议

会议19th International Conference on Electronic Packaging Technology, ICEPT 2018
国家/地区中国
Shanghai
时期8/08/1811/08/18

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