Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs

Jian Guo; Zhinong Yu; Wei Yan; Dawei Shi; Jianshe Xue; Wei Xue

doi:10.1002/SDTP.13642

Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs

Jian Guo, Zhinong Yu^*, Wei Yan, Dawei Shi, Jianshe Xue, Wei Xue

^*此作品的通讯作者

光电学院

科研成果: 期刊稿件 › 会议文章 › 同行评审

摘要

—We lead the lightly doped drain (LDD) structure into the bridged-grain (BG) poly-Si thin film transistor (TFT). This combined structure can restrain the gate induced drain leakage current (GIDL) and the electrical characteristics shows not much sacrifice. A high I_on/I_off current ratio 3.79×10⁸ is achieved. Besides, the device reliability is improved significantly. Because the lateral electrical field decreases by LDD, lower trap state density is generated in the SiO₂/poly-Si interface and the grain boundaries of poly-Si near the surface conduction channel, resulting in the stable on-state drive current (I_on) and drain saturation voltage (V_dsat). All test results indicate that the BG poly-Si TFT with a LDD structure will work well and has a great potential for system-on-panel application.

源语言	英语
页（从-至）	766-770
页数	5
期刊	Digest of Technical Papers - SID International Symposium
卷	50
期	S1
DOI	https://doi.org/10.1002/SDTP.13642
出版状态	已出版 - 2019
活动	International Conference on Display Technology, ICDT 2019 - Suzhou, 中国期限: 26 3月 2019 → 29 3月 2019

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10.1002/SDTP.13642

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@article{7930c68f8ecf420f848e83c820ec90a8,

title = "Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs",

abstract = "—We lead the lightly doped drain (LDD) structure into the bridged-grain (BG) poly-Si thin film transistor (TFT). This combined structure can restrain the gate induced drain leakage current (GIDL) and the electrical characteristics shows not much sacrifice. A high Ion/Ioff current ratio 3.79×108 is achieved. Besides, the device reliability is improved significantly. Because the lateral electrical field decreases by LDD, lower trap state density is generated in the SiO2/poly-Si interface and the grain boundaries of poly-Si near the surface conduction channel, resulting in the stable on-state drive current (Ion) and drain saturation voltage (Vdsat). All test results indicate that the BG poly-Si TFT with a LDD structure will work well and has a great potential for system-on-panel application.",

keywords = "Bridged-grain (BG), Hot-carrier effect (HC effect), Index Terms—low-temperature polycrystalline silicon thin film transistors (LTPS-TFTs), Lightly doped drain (LDD), Reliability",

author = "Jian Guo and Zhinong Yu and Wei Yan and Dawei Shi and Jianshe Xue and Wei Xue",

note = "Publisher Copyright: {\textcopyright} 2019, John Wiley and Sons Inc. All rights reserved.; International Conference on Display Technology, ICDT 2019 ; Conference date: 26-03-2019 Through 29-03-2019",

year = "2019",

doi = "10.1002/SDTP.13642",

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TY - JOUR

T1 - Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs

AU - Guo, Jian

AU - Yu, Zhinong

AU - Yan, Wei

AU - Shi, Dawei

AU - Xue, Jianshe

AU - Xue, Wei

PY - 2019

Y1 - 2019

N2 - —We lead the lightly doped drain (LDD) structure into the bridged-grain (BG) poly-Si thin film transistor (TFT). This combined structure can restrain the gate induced drain leakage current (GIDL) and the electrical characteristics shows not much sacrifice. A high Ion/Ioff current ratio 3.79×108 is achieved. Besides, the device reliability is improved significantly. Because the lateral electrical field decreases by LDD, lower trap state density is generated in the SiO2/poly-Si interface and the grain boundaries of poly-Si near the surface conduction channel, resulting in the stable on-state drive current (Ion) and drain saturation voltage (Vdsat). All test results indicate that the BG poly-Si TFT with a LDD structure will work well and has a great potential for system-on-panel application.

AB - —We lead the lightly doped drain (LDD) structure into the bridged-grain (BG) poly-Si thin film transistor (TFT). This combined structure can restrain the gate induced drain leakage current (GIDL) and the electrical characteristics shows not much sacrifice. A high Ion/Ioff current ratio 3.79×108 is achieved. Besides, the device reliability is improved significantly. Because the lateral electrical field decreases by LDD, lower trap state density is generated in the SiO2/poly-Si interface and the grain boundaries of poly-Si near the surface conduction channel, resulting in the stable on-state drive current (Ion) and drain saturation voltage (Vdsat). All test results indicate that the BG poly-Si TFT with a LDD structure will work well and has a great potential for system-on-panel application.

KW - Bridged-grain (BG)

KW - Hot-carrier effect (HC effect)

KW - Index Terms—low-temperature polycrystalline silicon thin film transistors (LTPS-TFTs)

KW - Lightly doped drain (LDD)

KW - Reliability

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U2 - 10.1002/SDTP.13642

DO - 10.1002/SDTP.13642

M3 - Conference article

AN - SCOPUS:85134197787

SN - 0097-966X

VL - 50

SP - 766

EP - 770

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - S1

T2 - International Conference on Display Technology, ICDT 2019

Y2 - 26 March 2019 through 29 March 2019

ER -

Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs

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