TY - JOUR
T1 - Effect of inorganic nanolayers on electron injection in polymer light-emitting diodes
AU - Quan, Shanyu
AU - Teng, Feng
AU - Xu, Zheng
AU - Wang, Dongdong
AU - Yang, Shengyi
AU - Hou, Yanbin
AU - Wang, Yongsheng
PY - 2006/4/3
Y1 - 2006/4/3
N2 - We report the effect of inorganic nanolayers on electron injection in the polymer light-emitting diodes (PLEDs) in which a hole is the major charge carrier. The inorganic nanolayers with different dielectric constants were placed between the emitting layer and the aluminum cathode, and their influence on the device performance was investigated. The device with a nanolayer of lower dielectric constant demonstrated higher efficiency, which is significantly higher than that of one without an insulating layer. The enhancement may result from the lowering of the effective barrier height for electron injection while increasing electron-tunneling probability, which improve the balanced injection of hole and electrons.
AB - We report the effect of inorganic nanolayers on electron injection in the polymer light-emitting diodes (PLEDs) in which a hole is the major charge carrier. The inorganic nanolayers with different dielectric constants were placed between the emitting layer and the aluminum cathode, and their influence on the device performance was investigated. The device with a nanolayer of lower dielectric constant demonstrated higher efficiency, which is significantly higher than that of one without an insulating layer. The enhancement may result from the lowering of the effective barrier height for electron injection while increasing electron-tunneling probability, which improve the balanced injection of hole and electrons.
UR - http://www.scopus.com/inward/record.url?scp=33645006101&partnerID=8YFLogxK
U2 - 10.1016/j.physleta.2005.11.078
DO - 10.1016/j.physleta.2005.11.078
M3 - Article
AN - SCOPUS:33645006101
SN - 0375-9601
VL - 352
SP - 434
EP - 437
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
IS - 4-5
ER -