摘要
The charge carriers conduction mechanism of single-layer device ITO/Alq3 (90 nm)/Al has been studied by impedance spectroscopy. According to the frequency-dependent response and its equivalent circuit model, the device can be interpreted in terms of the equivalent circuit model of a contact resistance RS in series with a parallel combination of a capacitance CP and a resistance RP, and the values of RP, CP and RS can be found from experimental data. Our experimental results confirmed that the charge carriers conduction mechanism of ITO/Alq3(90 nm)/Al is trap-charge limited current with exponential distribution, and the dielectric relaxation time of the material decreases dramatically with increasing applied bias voltages.
源语言 | 英语 |
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页(从-至) | 1632-1636 |
页数 | 5 |
期刊 | Wuli Xuebao/Acta Physica Sinica |
卷 | 56 |
期 | 3 |
出版状态 | 已出版 - 3月 2007 |
已对外发布 | 是 |