Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy

Wen Liu; Laifei Cheng; Xiaoqiang Li; Yiguang Wang

doi:10.1039/c5nr06659j

Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy

Wen Liu, Laifei Cheng, Xiaoqiang Li, Yiguang Wang^*

^*此作品的通讯作者

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

8 引用（Scopus）

摘要

The microstructural effects of SiC swelling, mechanisms of He diffusion and aggregation in C-rich SiC are studied using an in situ helium ion microscope. The additive carbon interface provides improved swelling resistance in SiC to ∼270 nm, and defect formation is not observed until very high He implantation doses.

源语言	英语
页（从-至）	762-765
页数	4
期刊	Nanoscale
卷	8
期	2
DOI	https://doi.org/10.1039/c5nr06659j
出版状态	已出版 - 14 1月 2016
已对外发布	是

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title = "Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy",

abstract = "The microstructural effects of SiC swelling, mechanisms of He diffusion and aggregation in C-rich SiC are studied using an in situ helium ion microscope. The additive carbon interface provides improved swelling resistance in SiC to ∼270 nm, and defect formation is not observed until very high He implantation doses.",

author = "Wen Liu and Laifei Cheng and Xiaoqiang Li and Yiguang Wang",

note = "Publisher Copyright: {\textcopyright} 2016 The Royal Society of Chemistry.",

year = "2016",

month = jan,

day = "14",

doi = "10.1039/c5nr06659j",

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T1 - Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy

AU - Liu, Wen

AU - Cheng, Laifei

AU - Li, Xiaoqiang

AU - Wang, Yiguang

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Y1 - 2016/1/14

N2 - The microstructural effects of SiC swelling, mechanisms of He diffusion and aggregation in C-rich SiC are studied using an in situ helium ion microscope. The additive carbon interface provides improved swelling resistance in SiC to ∼270 nm, and defect formation is not observed until very high He implantation doses.

AB - The microstructural effects of SiC swelling, mechanisms of He diffusion and aggregation in C-rich SiC are studied using an in situ helium ion microscope. The additive carbon interface provides improved swelling resistance in SiC to ∼270 nm, and defect formation is not observed until very high He implantation doses.

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U2 - 10.1039/c5nr06659j

DO - 10.1039/c5nr06659j

M3 - Article

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VL - 8

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JO - Nanoscale

JF - Nanoscale

IS - 2

ER -

Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy

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