摘要
Advanced Etch-Stop s tructure In-Ga-Zn-Oxide thin film transistor (A-ES TFT) using SD and IGZO layer self-aligned process is lower production cost, less parasitic capacitance than etch-stopped layer (ESL) Oxide TFTs. We also found excellent electrical properties and bias stability and fabricated a 12.5-inch liquid crystal panel using A-ES TFTs by only two photomask.
源语言 | 英语 |
---|---|
页(从-至) | 1212-1214 |
页数 | 3 |
期刊 | Digest of Technical Papers - SID International Symposium |
卷 | 49 |
期 | 1 |
DOI | |
出版状态 | 已出版 - 2018 |
已对外发布 | 是 |
活动 | SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, 美国 期限: 20 5月 2018 → 25 5月 2018 |
指纹
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Shang, F., Xiang, Y., Wang, R., Wang, X., Huang, Z., Xu, Z., Li, S., Liu, Z., Qiu, H., Yuan, J., Min, T., Ma, X., & Zhao, Y. (2018). Development of advanced etch-stop structures oxide TFT. Digest of Technical Papers - SID International Symposium, 49(1), 1212-1214. https://doi.org/10.1002/sdtp.12102