Development of advanced etch-stop structures oxide TFT

Fei Shang, Yong Xiang, Rui Wang, Xiaolin Wang, Zhonghao Huang, Zhuo Xu, Shaoru Li, Zhulin Liu, Haijun Qiu, Jianfeng Yuan, Taiye Min, Xiaofeng Ma, Yongliang Zhao

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1 引用 (Scopus)

摘要

Advanced Etch-Stop s tructure In-Ga-Zn-Oxide thin film transistor (A-ES TFT) using SD and IGZO layer self-aligned process is lower production cost, less parasitic capacitance than etch-stopped layer (ESL) Oxide TFTs. We also found excellent electrical properties and bias stability and fabricated a 12.5-inch liquid crystal panel using A-ES TFTs by only two photomask.

源语言英语
页(从-至)1212-1214
页数3
期刊Digest of Technical Papers - SID International Symposium
49
1
DOI
出版状态已出版 - 2018
已对外发布
活动SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, 美国
期限: 20 5月 201825 5月 2018

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Shang, F., Xiang, Y., Wang, R., Wang, X., Huang, Z., Xu, Z., Li, S., Liu, Z., Qiu, H., Yuan, J., Min, T., Ma, X., & Zhao, Y. (2018). Development of advanced etch-stop structures oxide TFT. Digest of Technical Papers - SID International Symposium, 49(1), 1212-1214. https://doi.org/10.1002/sdtp.12102