Determination of semiconductor properties through Hall-effect measurement with contactless microwave techniques

Xinqing Sheng; Shanjia Xu

Determination of semiconductor properties through Hall-effect measurement with contactless microwave techniques

Xinqing Sheng^*, Shanjia Xu

^*此作品的通讯作者

University of Science and Technology of China

科研成果: 会议稿件 › 论文 › 同行评审

摘要

This paper presents theoretical analysis for determination of semiconductor properties through Hall-Effect measurement with contactless microwave techniques. The scattering characteristics of semiconductor with tensor conductivity resulting of the Hall-Effect is analyzed with 3-D edge-element to determine the properties of semiconductor. Some useful curves are given and the procedure of determining the mobility and the carrier concentration of II-VI semiconductor with these curves is described.

源语言	英语
页	105-108
页数	4
出版状态	已出版 - 1996
已对外发布	是
活动	Proceedings of the 1996 International Topical Meeting on Microwave Photonics, MWP'96 - Kyoto, Jpn 期限: 3 12月 1996 → 5 12月 1996

会议

会议	Proceedings of the 1996 International Topical Meeting on Microwave Photonics, MWP'96
市	Kyoto, Jpn
时期	3/12/96 → 5/12/96

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引用此

@conference{87014b8ffaf244dc9ec1ca28c080c71a,

title = "Determination of semiconductor properties through Hall-effect measurement with contactless microwave techniques",

abstract = "This paper presents theoretical analysis for determination of semiconductor properties through Hall-Effect measurement with contactless microwave techniques. The scattering characteristics of semiconductor with tensor conductivity resulting of the Hall-Effect is analyzed with 3-D edge-element to determine the properties of semiconductor. Some useful curves are given and the procedure of determining the mobility and the carrier concentration of II-VI semiconductor with these curves is described.",

author = "Xinqing Sheng and Shanjia Xu",

year = "1996",

language = "English",

pages = "105--108",

note = "Proceedings of the 1996 International Topical Meeting on Microwave Photonics, MWP'96 ; Conference date: 03-12-1996 Through 05-12-1996",

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TY - CONF

T1 - Determination of semiconductor properties through Hall-effect measurement with contactless microwave techniques

AU - Sheng, Xinqing

AU - Xu, Shanjia

PY - 1996

Y1 - 1996

N2 - This paper presents theoretical analysis for determination of semiconductor properties through Hall-Effect measurement with contactless microwave techniques. The scattering characteristics of semiconductor with tensor conductivity resulting of the Hall-Effect is analyzed with 3-D edge-element to determine the properties of semiconductor. Some useful curves are given and the procedure of determining the mobility and the carrier concentration of II-VI semiconductor with these curves is described.

AB - This paper presents theoretical analysis for determination of semiconductor properties through Hall-Effect measurement with contactless microwave techniques. The scattering characteristics of semiconductor with tensor conductivity resulting of the Hall-Effect is analyzed with 3-D edge-element to determine the properties of semiconductor. Some useful curves are given and the procedure of determining the mobility and the carrier concentration of II-VI semiconductor with these curves is described.

UR - http://www.scopus.com/inward/record.url?scp=0030314173&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030314173

SP - 105

EP - 108

T2 - Proceedings of the 1996 International Topical Meeting on Microwave Photonics, MWP'96

Y2 - 3 December 1996 through 5 December 1996

ER -

Determination of semiconductor properties through Hall-effect measurement with contactless microwave techniques

摘要

会议

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引用此