Details of the topological state transition induced by gradually increased disorder in photonic Chern insulators

Bing Yang*, Hongfang Zhang, Qiang Shi, Tong Wu, Yong Ma, Zengtao Lv, Xia Xiao, Ruixin Dong, Xunling Yan, Xiangdong Zhang

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

16 引用 (Scopus)

摘要

Using two well-defined empirical parameters, we numerically investigate the details of the disorder-induced topological state transition (TST) in photonic Chern insulators composed of two-dimensional magnetic photonic crystals (MPCs). The TST undergoes a gradual process, accompanied with some interesting phenomena as the disorder of rod positions in MPCs increases gradually. This kind of TST is determined by the competition among the topologically protected edge state, disorder-induced wave localizations and bulk states in the system. More interestingly, the disorder-induced wave localizations almost have no influence on the one-way propagation of the original photonic topological states (PTSs), and the unidirectional nature of the PTSs at the edge area can survive even when the bulk states arise at stronger disorders. Our results provide detailed demonstrations for the deep understanding of fundamental physics underlying topology and disorder and are also of practical significance in device fabrication with PTSs.

源语言英语
页(从-至)31487-31498
页数12
期刊Optics Express
28
21
DOI
出版状态已出版 - 12 10月 2020

指纹

探究 'Details of the topological state transition induced by gradually increased disorder in photonic Chern insulators' 的科研主题。它们共同构成独一无二的指纹。

引用此