Design of a W-Band GaAs-Based SIW Chip Filter Using Higher Order Mode Resonances

Yu Xiao; Peizhe Shan; Yu Zhao; Houjun Sun; Fan Yang

doi:10.1109/LMWC.2018.2890265

Design of a W-Band GaAs-Based SIW Chip Filter Using Higher Order Mode Resonances

Yu Xiao, Peizhe Shan, Yu Zhao, Houjun Sun^*, Fan Yang

^*此作品的通讯作者

集成电路与电子学院

科研成果: 期刊稿件 › 文章 › 同行评审

42 引用（Scopus）

摘要

In this letter, an on-chip bandpass filter is designed and implemented based on a 70-\mu \text{m} GaAs substrate integrated waveguide (SIW) technique for W-band integrated transceiver applications. To achieve a high-frequency selectivity, a modal bypass coupling realized by higher order mode resonators is introduced in the SIW filter, and two designable transmission zeros are generated accordingly. The presented filter has a center frequency of 92.7 GHz, with a 3-dB bandwidth of about 3.2 GHz. The measured out-of-band rejection is better than 30 dB at 90 and 95 GHz, respectively.

源语言	英语
文章编号	8612922
页（从-至）	104-106
页数	3
期刊	IEEE Microwave and Wireless Components Letters
卷	29
期	2
DOI	https://doi.org/10.1109/LMWC.2018.2890265
出版状态	已出版 - 2月 2019

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title = "Design of a W-Band GaAs-Based SIW Chip Filter Using Higher Order Mode Resonances",

abstract = "In this letter, an on-chip bandpass filter is designed and implemented based on a 70-\mu \text{m} GaAs substrate integrated waveguide (SIW) technique for W-band integrated transceiver applications. To achieve a high-frequency selectivity, a modal bypass coupling realized by higher order mode resonators is introduced in the SIW filter, and two designable transmission zeros are generated accordingly. The presented filter has a center frequency of 92.7 GHz, with a 3-dB bandwidth of about 3.2 GHz. The measured out-of-band rejection is better than 30 dB at 90 and 95 GHz, respectively.",

keywords = "GaAs filter, W-band., on-chip filter, substrate integrated waveguide (SIW) bandpass filter (BPF), transmission zero (TZ)",

author = "Yu Xiao and Peizhe Shan and Yu Zhao and Houjun Sun and Fan Yang",

note = "Publisher Copyright: {\textcopyright} 2001-2012 IEEE.",

year = "2019",

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doi = "10.1109/LMWC.2018.2890265",

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T1 - Design of a W-Band GaAs-Based SIW Chip Filter Using Higher Order Mode Resonances

AU - Xiao, Yu

AU - Shan, Peizhe

AU - Zhao, Yu

AU - Sun, Houjun

AU - Yang, Fan

PY - 2019/2

Y1 - 2019/2

N2 - In this letter, an on-chip bandpass filter is designed and implemented based on a 70-\mu \text{m} GaAs substrate integrated waveguide (SIW) technique for W-band integrated transceiver applications. To achieve a high-frequency selectivity, a modal bypass coupling realized by higher order mode resonators is introduced in the SIW filter, and two designable transmission zeros are generated accordingly. The presented filter has a center frequency of 92.7 GHz, with a 3-dB bandwidth of about 3.2 GHz. The measured out-of-band rejection is better than 30 dB at 90 and 95 GHz, respectively.

AB - In this letter, an on-chip bandpass filter is designed and implemented based on a 70-\mu \text{m} GaAs substrate integrated waveguide (SIW) technique for W-band integrated transceiver applications. To achieve a high-frequency selectivity, a modal bypass coupling realized by higher order mode resonators is introduced in the SIW filter, and two designable transmission zeros are generated accordingly. The presented filter has a center frequency of 92.7 GHz, with a 3-dB bandwidth of about 3.2 GHz. The measured out-of-band rejection is better than 30 dB at 90 and 95 GHz, respectively.

KW - GaAs filter

KW - W-band.

KW - on-chip filter

KW - substrate integrated waveguide (SIW) bandpass filter (BPF)

KW - transmission zero (TZ)

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VL - 29

SP - 104

EP - 106

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 2

M1 - 8612922

ER -

Design of a W-Band GaAs-Based SIW Chip Filter Using Higher Order Mode Resonances

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