Design of a millimeter-wave high power pulsed amplifier

Yu Xiao; Guoqiang Zhao; Houjun Sun

doi:10.13443/j.cjors.2014090901

Design of a millimeter-wave high power pulsed amplifier

Yu Xiao, Guoqiang Zhao^*, Houjun Sun

^*此作品的通讯作者

集成电路与电子学院

Beijing Institute of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

A 33 dBm high power pulsed amplifier based on a monolithic microwave integrated circuit (MMIC) is designed and measured. The effect of direct current (DC) biased circuit on the pulse rising and falling time caused by the stabilizing capacitors and bond wire is discussed in detail. The measured rising and falling time is less than 60 ns, and the peak power descent is less than 10% which meets the technical requirements well.

源语言	英语
页（从-至）	803-807
页数	5
期刊	Dianbo Kexue Xuebao/Chinese Journal of Radio Science
卷	30
期	4
DOI	https://doi.org/10.13443/j.cjors.2014090901
出版状态	已出版 - 1 8月 2015

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Xiao, Y., Zhao, G., & Sun, H. (2015). Design of a millimeter-wave high power pulsed amplifier. Dianbo Kexue Xuebao/Chinese Journal of Radio Science, 30(4), 803-807. https://doi.org/10.13443/j.cjors.2014090901

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abstract = "A 33 dBm high power pulsed amplifier based on a monolithic microwave integrated circuit (MMIC) is designed and measured. The effect of direct current (DC) biased circuit on the pulse rising and falling time caused by the stabilizing capacitors and bond wire is discussed in detail. The measured rising and falling time is less than 60 ns, and the peak power descent is less than 10% which meets the technical requirements well.",

keywords = "Millimeter-wave high power amplifier, Parasitic parameters analysis, Pulse modulation",

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Design of a millimeter-wave high power pulsed amplifier

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