Design and Optimization of a Fan-Out Wafer-Level Packaging- Based Integrated Passive Device Structure for FMCW Radar Applications

This paper presents an integrated passive device (IPD) structure based on fan-out wafer-level packaging (FOWLP) for the front end of frequency-modulated continuous wave (FMCW) radar systems, focusing on enhancing the integration efficiency and performance of large passive components like antennas. Additionally, a new metric is introduced to assess this structure’s effect on the average noise figure in FMCW systems. Using this metric as a loss function, we apply the support vector machine (SVM) for electromagnetic simulation and the genetic algorithm (GA) for optimization. The sample fitting variance is 2.42 dB, reducing computation time from 12 min to under 1 millisecond, with the entire optimization completed in less than 100 s. The optimized IPD structure is 0.7 × 0.9 × 0.014 (Formula presented.) in size and achieves over 35 dB isolation between the transmitter and receiver. Compared to the IPD model calculated by empirical formulas, the optimized device lowers the average noise figure by 15.2 dB and increases maximum gain by 4.19 dB.