Deposition of indium tin oxide films on PET flexible substrate at room temperature

Zhi Nong Yu; Long Feng Xiang; Jin Xu; Wei Xue; Hua Qing Wang

Deposition of indium tin oxide films on PET flexible substrate at room temperature

Zhi Nong Yu^*, Long Feng Xiang, Jin Xu, Wei Xue, Hua Qing Wang

^*此作品的通讯作者

光电学院

Beijing Institute of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Flexible ITO films were deposited by Ion Beam Assisted Deposition (IBAD) to decrease the substrate temperature. Especially, the effects of influences of SiO₂ buffer layer on the properties of ITO films were studied. The results showed that the addition of SiO₂ reduced the increase of X-ray peak intensity and the blue shift of X-ray peak point. The resistivity of ITO film is 1.21 × 10^-3 Ω·cm and the transmittance about 85%. The film surface is comparatively smooth.

源语言	英语
页（从-至）	62-65
页数	4
期刊	Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology
卷	28
期	SUPPL.
出版状态	已出版 - 3月 2008

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Yu, Z. N., Xiang, L. F., Xu, J., Xue, W., & Wang, H. Q. (2008). Deposition of indium tin oxide films on PET flexible substrate at room temperature. Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology, 28(SUPPL.), 62-65.

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abstract = "Flexible ITO films were deposited by Ion Beam Assisted Deposition (IBAD) to decrease the substrate temperature. Especially, the effects of influences of SiO2 buffer layer on the properties of ITO films were studied. The results showed that the addition of SiO2 reduced the increase of X-ray peak intensity and the blue shift of X-ray peak point. The resistivity of ITO film is 1.21 × 10-3 Ω·cm and the transmittance about 85%. The film surface is comparatively smooth.",

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AU - Yu, Zhi Nong

AU - Xiang, Long Feng

AU - Xu, Jin

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N2 - Flexible ITO films were deposited by Ion Beam Assisted Deposition (IBAD) to decrease the substrate temperature. Especially, the effects of influences of SiO2 buffer layer on the properties of ITO films were studied. The results showed that the addition of SiO2 reduced the increase of X-ray peak intensity and the blue shift of X-ray peak point. The resistivity of ITO film is 1.21 × 10-3 Ω·cm and the transmittance about 85%. The film surface is comparatively smooth.

AB - Flexible ITO films were deposited by Ion Beam Assisted Deposition (IBAD) to decrease the substrate temperature. Especially, the effects of influences of SiO2 buffer layer on the properties of ITO films were studied. The results showed that the addition of SiO2 reduced the increase of X-ray peak intensity and the blue shift of X-ray peak point. The resistivity of ITO film is 1.21 × 10-3 Ω·cm and the transmittance about 85%. The film surface is comparatively smooth.

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Deposition of indium tin oxide films on PET flexible substrate at room temperature

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