TY - JOUR
T1 - Crystallization behavior and ferroelectric properties of PbTiO3/Ba0.85Sr0.15TiO3/PbTiO 3 sandwich thin film on Pt/Ti/SiO2/Si substrates
AU - Liu, Shaobo
AU - Li, Yanqiu
AU - Liu, Meidong
PY - 2003/10
Y1 - 2003/10
N2 - A PbTiO3/Ba0.85Sr0.15TiO3/PbTiO 3 (PT/BST15/PT) sandwich thin film has been prepared on Pt/Ti/SiO2/Si substrates by an improved sol-gel technique. It is found that such films under rapid thermal annealing at 700°C crystalline more favorably with the addition of a PbTiO3 layer. They possess a pure, perovskite-phase structure with a random orientation. The polarization-electric field (P-E) hysteresis loop and current-voltage (I-V) characteristics curves reveal that a PT/BST15/PT film exhibits good ferroelectricity at room temperature. However, no sharp peak, only a weak maximum, is observed in the curves of the dielectric constant versus temperature. The dielectric constant, loss tangent, leakage current density at 20 kV/cm, remnant polarization, and coercive field of the PT/BST15/PT film are 438, 0.025, 1.3 × 10-6 Acm-2, 2.46 μCcm-2, and 41 kVcm-1, respectively, at 25°C and 10 kHz. The PT/BST15/PT film is a candidate material for high sensitivity elements for uncooled, infrared, focal plane arrays (UFPAs) to be used at near ambient temperature.
AB - A PbTiO3/Ba0.85Sr0.15TiO3/PbTiO 3 (PT/BST15/PT) sandwich thin film has been prepared on Pt/Ti/SiO2/Si substrates by an improved sol-gel technique. It is found that such films under rapid thermal annealing at 700°C crystalline more favorably with the addition of a PbTiO3 layer. They possess a pure, perovskite-phase structure with a random orientation. The polarization-electric field (P-E) hysteresis loop and current-voltage (I-V) characteristics curves reveal that a PT/BST15/PT film exhibits good ferroelectricity at room temperature. However, no sharp peak, only a weak maximum, is observed in the curves of the dielectric constant versus temperature. The dielectric constant, loss tangent, leakage current density at 20 kV/cm, remnant polarization, and coercive field of the PT/BST15/PT film are 438, 0.025, 1.3 × 10-6 Acm-2, 2.46 μCcm-2, and 41 kVcm-1, respectively, at 25°C and 10 kHz. The PT/BST15/PT film is a candidate material for high sensitivity elements for uncooled, infrared, focal plane arrays (UFPAs) to be used at near ambient temperature.
KW - Dielectric properties
KW - Ferroelectric properties
KW - Sol-gel
KW - X-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=0242367994&partnerID=8YFLogxK
U2 - 10.1007/s11664-003-0092-4
DO - 10.1007/s11664-003-0092-4
M3 - Article
AN - SCOPUS:0242367994
SN - 0361-5235
VL - 32
SP - 1085
EP - 1089
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 10
ER -