Corrigendum: Thermal transport in nanocrystalline Si and SiGe by ab initio based Monte Carlo simulation (Scientific Reports, (2017), 7, 1, (44254), 10.1038/srep44254)

Lina Yang; Austin J. Minnich

doi:10.1038/srep46771

Corrigendum: Thermal transport in nanocrystalline Si and SiGe by ab initio based Monte Carlo simulation (Scientific Reports, (2017), 7, 1, (44254), 10.1038/srep44254)

Lina Yang, Austin J. Minnich

宇航学院

科研成果: 期刊稿件 › 评论/辩论

摘要

Scientific Reports 7: Article number: 44254; published online: 14 March 2017; updated: 02 May 2017 This Article contains errors in Figures 3, 4 and 5 where the graphs were labelled incorrectly. The correct Figures 3, 4 and 5 appear below as Figures 1, 2 and 3 respectively. (Figure Presented.).

源语言	英语
文章编号	46771
期刊	Scientific Reports
卷	7
期	1
DOI	https://doi.org/10.1038/srep46771
出版状态	已出版 - 25 9月 2017

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Yang, L., & Minnich, A. J. (2017). Corrigendum: Thermal transport in nanocrystalline Si and SiGe by ab initio based Monte Carlo simulation (Scientific Reports, (2017), 7, 1, (44254), 10.1038/srep44254). Scientific Reports, 7(1), 文章 46771. https://doi.org/10.1038/srep46771

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Corrigendum: Thermal transport in nanocrystalline Si and SiGe by ab initio based Monte Carlo simulation (Scientific Reports, (2017), 7, 1, (44254), 10.1038/srep44254)

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