摘要
Two-dimensional material (2D) that possesses atomic thin geometry and remarkable properties is a star material for the fundamental researches and advanced applications. Defects in 2D materials are critical and fundamental to understand the chemical, physical, and optical properties. Photoluminescence arises in 2D materials owing to various physical phenomena including activator/dopant-induced luminescence and defect-related emissions, and so forth. With the advanced transmission electron microscopy (TEM) technologies, such as aberration correction and low voltage technologies, the morphology, chemical compositions and electronic structures of defects in 2D material could be directly characterized at the atomic scale. In this review, we introduce the applications of state-of-the-art TEM technologies on the studies of the role of atomic defects in the photoluminescence characteristics in 2D material. The challenges in spatial and time resolution are also discussed. It is proved that TEM is a powerful tool to pinpoint the relationship between the defects and the photoluminescence characteristics.
源语言 | 英语 |
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页(从-至) | 85-97 |
页数 | 13 |
期刊 | InfoMat |
卷 | 1 |
期 | 1 |
DOI | |
出版状态 | 已出版 - 3月 2019 |
已对外发布 | 是 |