@inproceedings{26bd051fa1b74ab88caa7f34b069a147,
title = "Characteristics and applications of InGaN micro-light emitting diodes on Si substrates",
abstract = "InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.",
keywords = "GaN, Si, bandwidth, micro-LEDs",
author = "Pengfei Tian and McKendry, {Jonathan J.D.} and Zheng Gong and Shuailong Zhang and Scott Watson and Dandan Zhu and Watson, {Ian M.} and Erdan Gu and Kelly, {Anthony E.} and Humphreys, {Colin J.} and Dawson, {Martin D.}",
year = "2013",
doi = "10.1109/IPCon.2013.6656387",
language = "English",
isbn = "9781457715075",
series = "2013 IEEE Photonics Conference, IPC 2013",
pages = "97--98",
booktitle = "2013 IEEE Photonics Conference, IPC 2013",
note = "2013 26th IEEE Photonics Conference, IPC 2013 ; Conference date: 08-09-2013 Through 12-09-2013",
}