Carbon nitride thin films deposited by cathodic electrodeposition

Carbon nitride thin films were prepared by cathodic electrodeposition. The dicyandiamide compound dissovled in acetone was selected as the organic precursor. Single crystal silicon wafers and conductive glass (ITO) wafers were used as substrates. XPS measurements indicated that the films composed of carbon and nitrogen elements. The nitrogen content reached 41%.The polycrystalline β-C₃N₄ should exist in the prepared film from TED measurements. The nano hardness of the films on ITO substrates were as high as 13 GPa. The structure and properties were studies.