TY - JOUR
T1 - Blue-Emitting Cs(Pb,Cd)Br3 Nanocrystals Resistant to Electric Field-Induced Ion Segregation
AU - Anoshkin, Sergey S.
AU - Sapozhnikova, Elizaveta V.
AU - Feng, Yibo
AU - Ju, Yangyang
AU - Pavlov, Alexander
AU - Polozkov, Roman G.
AU - Yulin, Alexey
AU - Zhong, Haizheng
AU - Pushkarev, Anatoly P.
N1 - Publisher Copyright:
© 2024 American Chemical Society
PY - 2024/3/6
Y1 - 2024/3/6
N2 - High-performance solution-processed perovskite light-emitting diodes (PeLEDs) have emerged as a good alternative to the well-established technology of epitaxially grown AIIIBV semiconductor alloys. Colloidal cesium lead halide perovskite nanocrystals (CsPbX3 NCs) exhibit room-temperature excitonic emission that can be spectrally tuned across the entire visible range by varying the content of different halogens at the X-site. Therefore, they present a promising platform for full color display manufacturing. Engineering of highly efficient PeLEDs based on bromide and iodide perovskite NCs emitting green and red light, respectively, does not face major challenges except low operational stability of the devices. Meanwhile, mixed-halide counterparts demonstrating blue luminescence suffer from the electric field-induced phase separation (ion segregation) phenomenon described by the rearrangement (demixing) of mobile halide ions in the crystal lattice. This phenomenon results in an undesirable temporal redshift of the electroluminescence spectrum. However, to realize spectral tuning and, at the same time, address the issue of ion segregation less mobile Cd2+ ion could be introduced in the lattice at Pb2+-site that leads to the band gap opening. Herein, we report an original synthesis of CsPb0.88Cd0.12Br3 perovskite NCs and study their structural and optical properties, in particular electroluminescence. Multilayer PeLEDs based on the obtained NCs exhibit single-peak emission centered at 485 nm along with no noticeable change in the spectral line shape for 30 min which is a significant improvement of the device performance.
AB - High-performance solution-processed perovskite light-emitting diodes (PeLEDs) have emerged as a good alternative to the well-established technology of epitaxially grown AIIIBV semiconductor alloys. Colloidal cesium lead halide perovskite nanocrystals (CsPbX3 NCs) exhibit room-temperature excitonic emission that can be spectrally tuned across the entire visible range by varying the content of different halogens at the X-site. Therefore, they present a promising platform for full color display manufacturing. Engineering of highly efficient PeLEDs based on bromide and iodide perovskite NCs emitting green and red light, respectively, does not face major challenges except low operational stability of the devices. Meanwhile, mixed-halide counterparts demonstrating blue luminescence suffer from the electric field-induced phase separation (ion segregation) phenomenon described by the rearrangement (demixing) of mobile halide ions in the crystal lattice. This phenomenon results in an undesirable temporal redshift of the electroluminescence spectrum. However, to realize spectral tuning and, at the same time, address the issue of ion segregation less mobile Cd2+ ion could be introduced in the lattice at Pb2+-site that leads to the band gap opening. Herein, we report an original synthesis of CsPb0.88Cd0.12Br3 perovskite NCs and study their structural and optical properties, in particular electroluminescence. Multilayer PeLEDs based on the obtained NCs exhibit single-peak emission centered at 485 nm along with no noticeable change in the spectral line shape for 30 min which is a significant improvement of the device performance.
KW - cadmium doping
KW - colloidal nanocrystals
KW - halide perovskite
KW - ion segregation
KW - light-emitting diode
UR - http://www.scopus.com/inward/record.url?scp=85187200789&partnerID=8YFLogxK
U2 - 10.1021/acsami.3c18122
DO - 10.1021/acsami.3c18122
M3 - Article
C2 - 38407031
AN - SCOPUS:85187200789
SN - 1944-8244
VL - 16
SP - 11656
EP - 11664
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 9
ER -