Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor

Qundong Fu, Xin Cong, Xiaodong Xu, Song Zhu, Xiaoxu Zhao, Sheng Liu, Bingqing Yao, Manzhang Xu, Ya Deng, Chao Zhu, Xiaowei Wang, Lixing Kang, Qingsheng Zeng, Miao Ling Lin, Xingli Wang, Bijun Tang, Jianqun Yang, Zhili Dong, Fucai Liu, Qihua XiongJiadong Zhou, Qijie Wang*, Xingji Li*, Ping Heng Tan*, Beng Kang Tay, Zheng Liu*

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

10 引用 (Scopus)

摘要

Due to its inversion-broken triple helix structure and the nature of Weyl semiconductor, 2D Tellurene (2D Te) is promising to possess a strong nonlinear optical response in the infrared region, which is rarely reported in 2D materials. Here, a giant nonlinear infrared response induced by large Berry curvature dipole (BCD) is demonstrated in the Weyl semiconductor 2D Te. Ultrahigh second-harmonic generation response is acquired from 2D Te with a large second-order nonlinear optical susceptibility (χ(2)), which is up to 23.3 times higher than that of monolayer MoS2 in the range of 700–1500 nm. Notably, distinct from other 2D nonlinear semiconductors, χ(2) of 2D Te increases extraordinarily with increasing wavelength and reaches up to 5.58 nm V−1 at ≈2300 nm, which is the best infrared performance among the reported 2D nonlinear materials. Large χ(2) of 2D Te also enables the high-intensity sum-frequency generation with an ultralow continuous-wave (CW) pump power. Theoretical calculations reveal that the exceptional performance is attributed to the presence of large BCD located at the Weyl points of 2D Te. These results unravel a new linkage between Weyl semiconductor and strong optical nonlinear responses, rendering 2D Te a competitive candidate for highly efficient nonlinear 2D semiconductors in the infrared region.

源语言英语
文章编号2306330
期刊Advanced Materials
35
46
DOI
出版状态已出版 - 16 11月 2023

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